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In-situ early stage electromigration study in Al line using synchrotron polychromatic X-ray microdiffraction

Published online by Cambridge University Press:  01 February 2011

Kai Chen ,
N. Tamura  and
K. N. Tu
Kai Chen
Affiliation:
kchen@lbl.gov, University of California, Los Angeles, Materials Science and Engineering, 6532 Boelter Hall, 420 Westwood Plaza, Los Angeles, CA, 90095, United States
N. Tamura
Affiliation:
ntamura@lbl.gov, Lawrence Berkeley National Laboratory, Advanced Light Source, 1 Cyclotron Road, Berkeley, CA, 94720, United States
K. N. Tu
Affiliation:
kntu@ucla.edu, UCLA, Department of Materials Science and Engineering, Los Angeles, CA, 90095, United States
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Abstract

Electromigration is a phenomenon that has attracted much attention in the semiconductor industry because of its deleterious effects on electronic devices (such as interconnects) as they become smaller and current density passing through them increases. However, the effect of the electric current on the microstructure of interconnect lines during the very early stage of electromigration is not well documented. In the present report, we used synchrotron radiation based polychromatic X-ray microdiffraction for the in-situ study of the electromigration induced plasticity effects on individual grains of an Al (Cu) interconnect test structure. Dislocation slips which are activated by the electric current stressing are analyzed by the shape change of the diffraction peaks. The study shows polygonization of the grains due to the rearrangement of geometrically necessary dislocations (GND) in the direction of the current. Consequences of these findings are discussed.

Keywords

electromigrationx-ray diffraction (XRD)dislocations
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1079: Symposium N – Materials and Processes for Advanced Interconnects for Microelectronics , 2008 , 1079-N05-02
Copyright
Copyright © Materials Research Society 2008

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