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Effects of the Multilayer Structure on the Responsivity of Pyroelectric Thin Film Detectors

Published online by Cambridge University Press:  16 February 2011

Zhu Jianguo
Affiliation:
Department of Materials Science, Sichuan University, Chengdu 610064, China
Xiao Dingquan
Affiliation:
Department of Materials Science, Sichuan University, Chengdu 610064, China
Qian Zhenghong
Affiliation:
Department of Materials Science, Sichuan University, Chengdu 610064, China
Zhang Wen
Affiliation:
Department of Materials Science, Sichuan University, Chengdu 610064, China
Du Siaosong
Affiliation:
Department of Materials Science, Sichuan University, Chengdu 610064, China
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Abstract

Pyroelectric thin film detectors have advantages of wavelength independent sensitivity, room temperature operation and direct incorporation with integrated circuit amplifiers. Pyroelectric thin films with good quality have be prepared by many advanced thin film technologies [1-2]. The responsivity of pyroelectric thin film detectors is dependent on the thermal properties of the substrate, on which pyroelectric thin film detectors are prepared. The heat conduction in the detectors was investigated using the one-dimensional heat flow equation and the expressions describing the detectors performance were derived for pyroelectric thin films detectors with multilayer structure. The numerical simulation showed that the pyroelectric thin film detectors need effective heat isolation. If the air gap could be the heat isolation layer, which is between the bottom electrode and substrate, the iesponsivity of detectors would be higher than that of detectors which have no heat isolation in certain modulation frequency range.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

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References

references

1.Haerting, G. H., J. Vac. Sci. Technol, A 9(3), 414 (1991)Google Scholar
2.Swartz, S. L. and Wood, V. E., Condonsed Matter News 1(5), 4 (1992)Google Scholar
3.Blackburn, H. and Wright, H. C., Infored Physics, 10, 191 (1970)Google Scholar
4.Holeman, B. R., Infrared Physics, 12. 125 (1972)Google Scholar
5.Wu, S. Y., IEEE Transactions on Eleutron Devices, ED-27, No. 1, 88 (1980)Google Scholar
6.Blevin, W. R. and Geist, Jon, Applied Optics, 13, 1171 (1974)Google Scholar
7.Howe, R.T., J. Vac. Sci. Technol. B, 6(6), 1809 (1988)Google Scholar