Hostname: page-component-8448b6f56d-t5pn6 Total loading time: 0 Render date: 2024-04-24T23:17:05.031Z Has data issue: false hasContentIssue false
  • English
  • Français

Nanopatterning of GaAs(110) vicinal surfaces by hydrogen-assisted MBE

Published online by Cambridge University Press:  01 February 2011

M. L. Crespillo ,
J. L. Sacedón ,
B. A. Joyce  and
P. Tejedor
M. L. Crespillo
Affiliation:
Instituto de Ciencia de Materiales de Madrid, Cantoblanco, 28049 Madrid, Spain
J. L. Sacedón
Affiliation:
Instituto de Ciencia de Materiales de Madrid, Cantoblanco, 28049 Madrid, Spain
B. A. Joyce
Affiliation:
Department of Physics, Imperial College London, Blackett Laboratory, London SW7 2AZ, United Kingdom
P. Tejedor
Affiliation:
Instituto de Ciencia de Materiales de Madrid, Cantoblanco, 28049 Madrid, Spain
Get access

Abstract

The effect of atomic hydrogen on the growth mode and surface morphology of GaAs(110) thin films grown by molecular beam epitaxy (H-MBE) has been studied for different kinetic regimes using atomic force microscopy (AFM). Growth in the Ga supply-limited regime after H-assisted oxide removal leads to the formation of multi-atomic step arrays by step bunching with a very uniform terrace size distribution in the 80 nm range. Growth under As-deficient conditions after H-assisted oxide removal induces a rapid self-organization of the GaAs(110) surface into a ridge pattern along the <001> tilt direction, which is broken down into a 3D mound morphology when H is also present during growth. A chacteristic nanofacetting of the surface with very straight <1–10> -type steps is observed at high temperatures regardless of atomic hydrogen being used during oxide desorption and/or epitaxial growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 849: Symposium KK – Kinetics-Driven Nanopatterning on Surfaces , 2004 , KK7.1
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Tejedor, P., Allegretti, F.E., Šmilauer, P., Joyce, B.A., Surf. Sci., 407, 82 (1998)Google Scholar
[2] Tejedor, P., Šmilauer, P., Joyce, B.A., Microelectronics J. 30, 477 (1999)Google Scholar
[3] Tejedor, P., Šmilauer, P., Joyce, B.A., Surf. Sci. 429, L309 (1999)Google Scholar
[4] Bales, G.S. and Zangwill, A., Phys. Rev. B 41, 5500 (1990)Google Scholar
[5] Tejedor, P., Šmilauer, P., Roberts, C., Joyce, B.A., Phys. Rev. B 59, 2341 (1999)Google Scholar
[6] Nötzel, R., Schönherr, H.P., Niu, Z., Däweritz, L., Ploog, K.H., J. Crys. Growth 201/02, 814 (2001)Google Scholar
[7] Nötzel, R., Ploog, K.H., J. Crys. Growth 227, 8 (2001)Google Scholar
[8] Wright, A.F., Fong, C.Y., Batra, I.P., Surf. Sci. 244, 51 (1991)Google Scholar
[9] Rost, M., Šmilauer, P., Krug, J., Surf. Sci. 369, 393 (1996)Google Scholar