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Low-Carbon Boron Carbidestproduced by CVD

Published online by Cambridge University Press:  25 February 2011

A. N. Campbell ,
A. W. Mullendore ,
D. R. Tallant  and
C. Wood
A. N. Campbell
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
A. W. Mullendore
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
D. R. Tallant
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185
C. Wood
Affiliation:
Jet Propulsion Laboratory, Pasadena, CA 91109
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Abstract

Boron carbides with low C contents were produced from BC13 and CCl4 by chemical vapor deposition at temperatures of 1020–1500°C. The deposits were found to be between B13C2 and B13 C (8.3 to 13.3 at %C) in composition by means of Auger electron spectroscopy. Raman spectroscopy demonstrates that the specimens contain very little free carbon. Further, disordering of C in the chains and icosahedra of the rhombohedral boron carbide structure for C contents of less than 20 at.% is indicated by the Raman results. Singlephase rhombohedral boron carbides with C contents as low as 12.5 at.% (≈B7C) have been produced. The most B-rich specimens, containing 8.3 at.% (B11 C) or less C, were phase separated. At least one of the phases in the phase separated specimens is tetragonal. The electrical conductivity and Hall mobility of the B11C specimen are reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 113
Copyright
Copyright © Materials Research Society 1987

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References

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