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Switching speed in Resistive Random Access Memories (RRAMS) based on plastic semiconductor

Published online by Cambridge University Press:  22 June 2011

Paulo F. Rocha ,
Henrique L. Gomes ,
Asal Kiazadeh ,
Qian Chen ,
Dago M. de Leeuw  and
Stefan C. J. Meskers
Paulo F. Rocha
Affiliation:
Center of Electronics Optoelectronics and Telecommunications (CEOT), Universidade do Algarve, Campus de Gambelas, 8005-139 Faro, Portugal
Henrique L. Gomes
Affiliation:
Center of Electronics Optoelectronics and Telecommunications (CEOT), Universidade do Algarve, Campus de Gambelas, 8005-139 Faro, Portugal
Asal Kiazadeh
Affiliation:
Center of Electronics Optoelectronics and Telecommunications (CEOT), Universidade do Algarve, Campus de Gambelas, 8005-139 Faro, Portugal
Qian Chen
Affiliation:
Center of Electronics Optoelectronics and Telecommunications (CEOT), Universidade do Algarve, Campus de Gambelas, 8005-139 Faro, Portugal
Dago M. de Leeuw
Affiliation:
Philips Research Labs, High Tech. Campus, 5656 AE Eindhoven, The Netherlands
Stefan C. J. Meskers
Affiliation:
Molecular Materials and Nanosystems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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Abstract

This work addresses non-volatile memories based on metal-oxide polymer diodes. We make a thorough investigation into the static and dynamic behavior. Current-voltage characteristics with varying voltage ramp speed demonstrate that the internal capacitive double-layer structure inhibits the switching at high ramp rates (typical 1000 V/s). This behavior is explained in terms of an equivalent circuit.

It is also reported that there is not a particular threshold voltage to induce switching. Voltages below a particular threshold can still induce switching when applied for a long period of time. The time to switch is longer the lower is the applied voltage and follows an exponential behavior. This suggests that for a switching event to occur a certain amount of charge is required.

Keywords

electrical propertieselectronic structuresemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1337: Symposium Q – New Functional Materials and Emerging Device Architectures for Nonvolatile Memories , 2011 , mrss11-1337-q10-06
Copyright
Copyright © Materials Research Society 2011

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References

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