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Er Luminescence in Si: A Critical Balance between Optical Activity and Pumping Efficiency

Published online by Cambridge University Press:  21 February 2011

S. Coffa
Affiliation:
Dipartimento di Fisica, Universitá di Catania, Corso Italia 57, I95129 Catania (Italy)
F. Priolo
Affiliation:
Dipartimento di Fisica, Universitá di Catania, Corso Italia 57, I95129 Catania (Italy)
G. Franzó
Affiliation:
Dipartimento di Fisica 'A. Volta', Universitá di Pavia, Via Bassi 6, I27100 Pavia (Italy)
V. Bellani
Affiliation:
Dipartimento di Fisica 'A. Volta', Universitá di Pavia, Via Bassi 6, I27100 Pavia (Italy)
A. Carnera
Affiliation:
Dipartimento di Fisica, Universitá di Padova, Via F. Marzolo 8, I35131 Padova (Italy)
C. Spinella
Affiliation:
IMETEM - CNR, Corso Italia 57, I95129 Catania (Italy)
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Abstract

The several processes required to achieve Er luminescence in Si are investigated. In particular, the role of Er - O interactions to obtain the incorporation of high Er concentrations, electrically and optically active, in crystalline Si is investigated. It is found that a large enhancement in the electrical activation of Er (up to three orders of magnitude) is obtained by co-implanting Er with O at 573 K or at 77 K. However, the introduction of high concentrations of active Er in Si is not sufficient to obtain a large enhancement in the luminescence since an efficient pumping of the optically active sites is also required. The optical efficiency of this sample has been studied by photoluminescence. It is seen that an enhancement by a factor of ∼ 5 with respect to literature data is obtained. Moreover studies on the luminescence intensity as a function of the pump power gave important information on the mechanisms underlying Er luminescence in Si and its competing phenomena. These data are presented and discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

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References

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