Hostname: page-component-8448b6f56d-tj2md Total loading time: 0 Render date: 2024-04-16T10:05:14.880Z Has data issue: false hasContentIssue false
  • English
  • Français

Real-Time in Situ Monitoring of Defect Evolution at Widegap II-VI/GaAs Heterointerfaces during Epitaxial Growth

Published online by Cambridge University Press:  22 February 2011

C.M. Rouleau  and
R.M. Park
C.M. Rouleau
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
R.M. Park
Affiliation:
University of Florida, Department of Materials Science and Engineering, Gainesville, FL 32611
Get access

Abstract

We report the real-time in situ observation of heterointerface dislocation formation during the growth of lattice-mismatched widegap II-VI/GaAs heterostructures. Such observations were made by employing a near-normal incidence HeNe laser probe during epitaxial growth which generated both a laser reflection interferometry (LRI) signal as well as an elastically scattered laser light (ELLS) signal. We believe that the scattered light signal is generated at the II-VI/GaAs heterointerface based on the observation of a π phase difference between the LRI and the ELLS signals which were monitored simultaneously. We suggest, therefore, that the observed ELLS signal is a consequence of dislocation formation at the heterointerface which occurs due to plastic deformation in lattice-mismatched systems.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 324: Symposium K – Diagnostic Techniques for Semiconductor Materials Processing , 1993 , 125
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Park, R.M., Troffer, M.B., Rouleau, C.M., DePuydt, J.M. and Haase, M.A., Appl. Phys. Lett. 57, 2127 (1990).CrossRefGoogle Scholar
2 Ohkawa, K., Karasawa, T. and Mitsuyu, T., Jpn. J. Appl. Phys. 30, L152 (1991).CrossRefGoogle Scholar
3. Okuyama, H., Miyajima, T., Morinaga, Y., Hiei, F., Ozawa, M., and Akimoto, K., Electron. Lett. 28, 1798 (1992).Google Scholar
4. Haase, M.A., Qui, J., DePuydt, J.M., and Cheng, H., Appl. Phys. Lett. 59, 1272 (1991).Google Scholar
5. Jeon, H., Ding, J., Patterson, W., Nurmikko, A.V., Xie, W., Grillo, D.C., Kobayashi, M., and Gunshor, R.L., Appl. Phys. Lett. 59, 3619 (1991).Google Scholar
6. Hartley, R.H., Folkard, M.A., Carr, D., Orders, P.J., Rees, D., Varga, I.K., Kumar, V., Shen, G., Steele, T.A., Buskes, H., and Lee, J.B., J. Vac. Sci. Technol. B 10, 1410 (1992).Google Scholar
7. Maracas, G.N., Edwards, J.L., Shiralagi, K., Choi, K.Y., Droopad, R., Johs, B., and Woolam, J.A., J. Vac. Sci. Technol. A 10, 1832 (1992).Google Scholar
8. Quinn, W.E., Aspnes, D.E., Brasil, M.J.S.P., Pudensi, M.A.A., Schwarz, S.A., Tamargo, M.C., Gregory, S., and Nahory, R.E., J. Vac. Sci. Technol. B 10, 759 (1992).Google Scholar
9. Rouleau, C.M. and Park, R.M., Appl. Phys. Lett. 60, 2723 (1992).CrossRefGoogle Scholar
10. Lavoie, C., Johnson, S.R., Mackenzie, J.A., Tiedje, T., and Buuren, T. van, J. Vac. Sci. Technol. A 10, 930 (1992).Google Scholar
11. Rouleau, C.M. and Park, R.M., J. Appl. Phys. 73, 4610 (1993).Google Scholar
12. Pidduck, A.J., Robbins, D.J., Cullis, A.G., Gasson, D.B., and Glasper, J.L., J. Electrochem. Soc. 136, 3083 (1989).Google Scholar
13. Pidduck, A.J., Robbins, D.J., Gasson, D.B., Pickering, C., and Glasper, J.L., J. Electrochem. Soc. 136, 3088 (1989).CrossRefGoogle Scholar
14. Olson, J.M. and Kibbler, A., J. Cryst. Growth, 77, 182 (1986).Google Scholar