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A Comparison of Surface Passivation Techniques for Measurement of Minority Carrier Lifetime in Thin Si Wafers: Toward a Stable and Uniform Passivation

Published online by Cambridge University Press:  17 June 2014

Bhushan Sopori
Affiliation:
National Renewable Energy Laboratory, Golden, CO, USA
Srinivas Devayajanam
Affiliation:
National Renewable Energy Laboratory, Golden, CO, USA New Jersey Institute of Technology, Newark, NJ, USA
Prakash Basnyat
Affiliation:
National Renewable Energy Laboratory, Golden, CO, USA
Vishal Mehta
Affiliation:
National Renewable Energy Laboratory, Golden, CO, USA
Helio Moutinho
Affiliation:
National Renewable Energy Laboratory, Golden, CO, USA
Bill Nemeth
Affiliation:
National Renewable Energy Laboratory, Golden, CO, USA
Vincenzo LaSalvia
Affiliation:
National Renewable Energy Laboratory, Golden, CO, USA
Steve Johnston
Affiliation:
National Renewable Energy Laboratory, Golden, CO, USA
N.M. Ravindra
Affiliation:
New Jersey Institute of Technology, Newark, NJ, USA
Jeff Binns
Affiliation:
SunEdison, St. Peters, MO, USA
Jesse Appel
Affiliation:
SunEdison, Portland, OR, USA
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Abstract

We describe appropriate wafer cleaning procedure and surface passivation characteristics of various passivants used for making measurement of minority carrier lifetime (τB ) of very high quality Si wafers. These passivants include: iodine ethanol (I-E), quinhydrone methanol (QH-M), SiO2, and Al2O3. The issues related to the passivation stability and the spatial uniformity for mapping τB are also discussed.

Type
Articles
Copyright
Copyright © Materials Research Society 2014 

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References

REFERENCES

Sopori, B., Rupnowski, P., Appel, J., Guhabiswas, D., Anderson-Jackson, L., “Light-Induced Passivation of Si by Iodine Ethanol Solution”, Materials Research Society (MRS) Fall Meeting, Boston, pp.137144, 2008, and the references therein.Google Scholar