Hostname: page-component-76fb5796d-r6qrq Total loading time: 0 Render date: 2024-04-25T19:54:19.308Z Has data issue: false hasContentIssue false
  • English
  • Français

Defect Creation by Electron Beam Irradiation in Amorphous Silicon Nitride Films Compared with That by Light Soaking

Published online by Cambridge University Press:  17 March 2011

Tatsuo Shimizu ,
Yuji Kawashima  and
Minoru Kumeda
Tatsuo Shimizu
Affiliation:
Department of Electrical and Electronic Engineering, Kanazawa University, Kanazawa 920-8667, Japan
Yuji Kawashima
Affiliation:
Department of Electrical and Electronic Engineering, Kanazawa University, Kanazawa 920-8667, Japan
Minoru Kumeda
Affiliation:
Department of Electrical and Electronic Engineering, Kanazawa University, Kanazawa 920-8667, Japan
Get access

Abstract

Defect creation by electron beam irradiation is compared with that by light soaking in a-Si1-xNx:H films. For the film with x=0.06, the ESR spin density increases by 20-keV electron beam irradiation without changes in the g-value. However, for the film with x=0.47, the ESR spin density increases with accompanying the decrease in the g-value from 2.0042 to 2.0034. The decrease in the g-value can be explained by increasing number of N atoms at the backbond site of the Si atom having the dangling bond. Light soakings does not change the g-value of the ESR signals of the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A14.6
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Staebler, D. L. and Wronski, C. R., Appl. Phys. Lett. 31, 292 (1977).Google Scholar
2. Hirabayashi, I., Morigaki, K. and Nitta, S., Jpn. J. Appl. Phys. 19, L357 (1980).Google Scholar
3. Schneider, U., Schroder, B. and Finger, F., J. Non-Cryst. Solids 114, 633 (1989).10.1016/0022-3093(89)90673-XGoogle Scholar
4. Ishii, N., Oozora, S., Kumeda, M. and Shimizu, T., Phys. Stat. Sol. (b) 114, K111 (1982).10.1002/pssb.2221140260Google Scholar
5. Shimizu, T. and Kumeda, M., Jpn. J. Appl. Phys. 38, L911 (1999).Google Scholar
6. Ley, L., Reichardt, J. and Johnson, R. L., Phys. Rev. Lett. 49, 1664 (1982).Google Scholar
7. Shimizu, T., Maehara, T., Mitani, M. and Kumeda, M., Jpn. J. Appl. Phys. 40, 1244 (2001).Google Scholar
8. Grimberger, M., McConville, R., Redfield, D. and Bube, R. H., Mat. Res. Soc. Symp. Proc. 297, 655 (1993).Google Scholar