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Electrochemical Studies of Copper Chemical Mechanical Polishing Mechanism: Effects of Oxidizer Concentration

Published online by Cambridge University Press:  01 February 2011

J. Lu ,
J.E. Garland ,
C.M. Petite ,
S.V. Babu  and
D. Roy
J. Lu
Affiliation:
Center for Advanced Materials Processing and Department of PhysicsClarkson University, Potsdam, NY 13699, U.S.A.
J.E. Garland
Affiliation:
Center for Advanced Materials Processing and Department of PhysicsClarkson University, Potsdam, NY 13699, U.S.A.
C.M. Petite
Affiliation:
Center for Advanced Materials Processing and Department of PhysicsClarkson University, Potsdam, NY 13699, U.S.A.
S.V. Babu*
Affiliation:
Center for Advanced Materials Processing and Department of PhysicsClarkson University, Potsdam, NY 13699, U.S.A.
D. Roy*
Affiliation:
Center for Advanced Materials Processing and Department of PhysicsClarkson University, Potsdam, NY 13699, U.S.A.
*
3Corresponding Author
3Corresponding Author
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Abstract

The process of copper chemical-mechanical planarization (CMP) can be considered as an erosion corrosion process. Such a process can be efficiently studied by in situ and ex situ electrochemical techniques, such as potentiodynamic scan and electrochemical impedance spectroscopy (EIS). Using a copper disk as the working electrode in an electrochemical cell, slurries with different oxidizer concentrations have been investigated with the aforementioned techniques. Corresponding dissolution tests were also studied and compared. It is shown that changing the oxidizer concentration leads to the formation of surface films with different structure and composition on the copper surface during CMP process. The nature of these films controls the rate of copper corrosion. These results could be used to explain the change of copper removal rate in different oxidizer concentration, as well as to understand the copper CMP mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 767: Symposium F – Chemical-Mechanical Planarization , 2003 , F6.4
Copyright
Copyright © Materials Research Society 2003

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Footnotes

1

Center for Advanced Materials Processing, Box 5707

2

Department of Physics, Box 5820

4

E-Mail: babu@clarkson.edu

5

E-Mail: samoy@clarkson.edu

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