Hostname: page-component-8448b6f56d-cfpbc Total loading time: 0 Render date: 2024-04-19T07:41:07.571Z Has data issue: false hasContentIssue false

Formation of Al Nanodot Array by the Combination of Nano-Indentation and Anodic Oxidation

Published online by Cambridge University Press:  15 March 2011

S. Shingubara
Affiliation:
Graduate School of ADSM, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima 739-8530, Japan, e-mail:, shingu@hiroshima-u.ac.jp
Y. Murakami
Affiliation:
Graduate School of ADSM, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima 739-8530, Japan, e-mail:, shingu@hiroshima-u.ac.jp
K. Morimoto
Affiliation:
Graduate School of ADSM, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima 739-8530, Japan, e-mail:, shingu@hiroshima-u.ac.jp
H. Sakaue
Affiliation:
Graduate School of ADSM, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima 739-8530, Japan, e-mail:, shingu@hiroshima-u.ac.jp
T. Takahagi
Affiliation:
Graduate School of ADSM, Hiroshima University, Kagamiyama 1-3-1, Higashi-Hiroshima 739-8530, Japan, e-mail:, shingu@hiroshima-u.ac.jp
Get access

Abstract

The control of nanoholes formed by anodic oxidation of aluminum (Al) was investigated using AFM nano-indentation on Al film prior to the anodic oxidation. It is well known that ordered trigonal nanohole arrays are formed under certain voltage conditions of anodic oxidation of Al. We succeeded in forming both tetragonal and trigonal arrays of alumina nanoholes on a SiO2/Si- substrate by using nano-indentation on the surface of sputtered pure Al film. The ordered array of nanoholes was obtained at indentation intervals that were close to the nearest neighbor distance of nanoholes in the self-organization condition. Furthermore, we fabricated tetragonal and hexagonal Al nanodot arrays by the selective removal of porous alumina film.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Keller, F., Hunter, M.S., and Robinson, D., J. Electrochem. Soc. 100, 411 (1953).Google Scholar
2. O'Sullivan, J.P. and Wood, G.C., Proc. Roy. Soc. London A317, 511 (1970).Google Scholar
3. Granqvist, C.G., Anderson, A., and Hundrei, O., Appl. Phys. Lett. 35, 268 (1979).Google Scholar
4. Hornyak, H.L., Patrissi, C.J., and Martin, C.R., J. Phys. Chem. B101, 1548 (1997).Google Scholar
5. Routkevitch, D., Bigioni, T., Moskovits, M., and Xu, J.M., J. Phys. Chem. 100, 14037 (1996).Google Scholar
6. Routkevitch, D., Tager, A.A., Haruyama, J., Almawlawi, D., Moskovits, M., and Xu, J.M., IEEE Trans. Electron Devices 43, 1646 (1996).Google Scholar
7. Masuda, H. and Fukuda, K., Science 268, 146 (1995).Google Scholar
8. Shingubara, S., Okino, O., Sayama, Y., Sakaue, H., and Takahagi, T., Jpn. J. Appl. Phys. 36, 7791 (1997).Google Scholar
9. Masuda, H., Kasegawa, F., and Ono, S., J. Electrochem. Soc. 144, L127 (1997).Google Scholar
10. Masuda, H., Yada, K., and Osaka, A., Jpn. J. Appl. Phys. 37, L1340 (1998).Google Scholar
11. Shingubara, S., Okino, O., Sakaue, H., and Takahagi, T., Solid State Electronics 43, 1143 (1999).Google Scholar
12. Shingubara, S., Okino, O., Sakaue, H., and Takahagi, T., J.Vacuum Sci.Technol. B 19 (2001) pp. 19011904.Google Scholar
13. Murakami, Y., Shingubara, S., Sakaue, H., and Takahagi, T., Digest papers of Microprocesses and Nanotechnology 2000 (2000) pp. 178179.Google Scholar
14. Shingubara, S., Murakami, Y., Sakaue, H., and Takahagi, T., Jpn. J. Appl. Phys., accepted for publication in 2002.Google Scholar
15. Amlani, I., Orlov, A. O., and Kummamuru, R. K., Appl. Phy. Lett. 77, 738 (2000).Google Scholar
16. Masuda, H., Yamada, H., Satoh, M., and Asoh, H., Appl. Phy. Lett. 71, 2770 (1997).Google Scholar
17. Asoh, H., Nishio, K., Nakao, M., Tamamura, T., and Masuda, H., J. of Electrochem. Soc. 128, B152 (2001).Google Scholar
18. Haes, A. H., Haynes, C. L., and Duyne, R. P. Van, Mat. Res. Soc. Symp. Proc. 636 (2001) D4.8.Google Scholar