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The Optical Properties of the Interface Layer in CdS-CdTe Heterojunctions

Published online by Cambridge University Press:  01 February 2011

Sergiu A. Vatavu
Sergiu A. Vatavu*
Affiliation:
Faculty of Physics, Moldova State University, 60 A.Mateevici str., Chisinau, MD 2009, Republic of Moldova
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Abstract

The photosensitivity and electro-reflection spectra of CdS/CdTe heterojunctions annealed up to one hour in presence of CdC12 have been studied. The lifetime of charge carriers, generated in the interface layer, has been determined.

The SnO2/CdS/CdTe/Ni thin films solar cells, deposited by close-spaced sublimation (CSS) technique are photosensitive in the 1.5-2.4 eV spectral region. The spectral distribution of photocurrent is not essentially modified by the increase of the annealing time. A slight decrease of the photocurrent in the 1.5-1.7 eV energy range is observed and the photocurrent slightly increases in the 1.7-2.4 eV region. The recombination of the nonequilibrium charge carriers in the interface layer takes place via recombination levels having a lifetime value, which decreases from 46 μs down to 30 μs along with photon energy increase from 1.55 eV to 2.4 eV respectively (T=293K). The correlation between the light penetration depth in component layers, estimated from the absorption spectral distribution and the photon energies was established.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 865: Symposium F – Thin-Film Compound Semiconductor Photovoltaics , 2005 , F5.22
Copyright
Copyright © Materials Research Society 2005

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