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Stability of Amorphous Silicon Solar Cells — New Tandem a-SiC/a-Si Solar Cell

Published online by Cambridge University Press:  28 February 2011

Y. Tawada ,
J. Takada ,
M. Yamaguchi ,
H. Yamagishi ,
Y. Hosokawa ,
A. Hiroe ,
M. Kondo ,
K. Asaoka ,
N. Fukada  and
K. Tsuge
Y. Tawada
Affiliation:
Central Research Laboratories Kanegafuchi Chemical Industry Co. Ltd. 2-80 Yoshida-cho 1, Hyogo, Kobe 652, Japan
J. Takada
Affiliation:
Central Research Laboratories Kanegafuchi Chemical Industry Co. Ltd. 2-80 Yoshida-cho 1, Hyogo, Kobe 652, Japan
M. Yamaguchi
Affiliation:
Central Research Laboratories Kanegafuchi Chemical Industry Co. Ltd. 2-80 Yoshida-cho 1, Hyogo, Kobe 652, Japan
H. Yamagishi
Affiliation:
Central Research Laboratories Kanegafuchi Chemical Industry Co. Ltd. 2-80 Yoshida-cho 1, Hyogo, Kobe 652, Japan
Y. Hosokawa
Affiliation:
Central Research Laboratories Kanegafuchi Chemical Industry Co. Ltd. 2-80 Yoshida-cho 1, Hyogo, Kobe 652, Japan
A. Hiroe
Affiliation:
Central Research Laboratories Kanegafuchi Chemical Industry Co. Ltd. 2-80 Yoshida-cho 1, Hyogo, Kobe 652, Japan
M. Kondo
Affiliation:
Central Research Laboratories Kanegafuchi Chemical Industry Co. Ltd. 2-80 Yoshida-cho 1, Hyogo, Kobe 652, Japan
K. Asaoka
Affiliation:
Central Research Laboratories Kanegafuchi Chemical Industry Co. Ltd. 2-80 Yoshida-cho 1, Hyogo, Kobe 652, Japan
N. Fukada
Affiliation:
Central Research Laboratories Kanegafuchi Chemical Industry Co. Ltd. 2-80 Yoshida-cho 1, Hyogo, Kobe 652, Japan
K. Tsuge
Affiliation:
Central Research Laboratories Kanegafuchi Chemical Industry Co. Ltd. 2-80 Yoshida-cho 1, Hyogo, Kobe 652, Japan
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Abstract

Basic technologies for solving problems in thermal and light-induced degradation have been developed. The tandem type a-SiC/a-Si solar cell with blocking layers exhibits excellent stability for both thermal and sun light conditions. An observable light-induced degradation is not seen in the cell performance after light exposure test of 2000 hours. Two instability modes, that is, thermal and light-induced degradation have been investigated. For thermal degradation, a blocking layer for preventing diffusion has been inserted between the back side metal electrode and a n-layer and another blocking layer has been introduced between the np tunnel junction. To prevent light-induced degradation, p-type a-SiC layer of the pin structure on the side of a glass substrate/SnO2 has been deposited at the temperature of 70°C. The highest efficiency is 9.0% at the present stage, but it is expected to be improved to more than 10%.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 587
Copyright
Copyright © Materials Research Society 1986

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References

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