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Passivation of Poly-Si Thin-Film Transistors With Ion-Implanted Deuterium

Published online by Cambridge University Press:  10 February 2011

Albert W. Wang  and
Krishna C. Saraswat
Albert W. Wang
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305
Krishna C. Saraswat
Affiliation:
Department of Electrical Engineering, Stanford University, Stanford, CA 94305
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Abstract

A comparison of ion-implanted deuterium and ion implanted hydrogen for passivation of grain boundary states in poly-Si thin film transistors (TFTs) is presented for the first time. Gate-drain bias stressing was carried out after anneals at 350 °C, 400 °C, and 450 °C. Under stress, deuterated TFTs are more resistant to bias stress than hydrogenated TFTs in terms of most PMOS performance parameters and NMOS leakage current, but are markedly less resistant to NMOS threshold degradation. While still showing promise, these results are not as impressive as those shown for hot carrier degradation in very large scale integration (VLSI) MOS devices. After 350 °C activation anneal, deuterium is less effective than hydrogen at initial device passivation, probably as a result of excessive implant damage. After anneals at 400 or 450 °C, deuterium becomes more effective at passivation than hydrogen, possibly due to differences in diffusion between hydrogen and deuterium.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 508: Symposium B – Flat Panel Display Materials - 1998 , January 1998 , 85
Copyright
Copyright © Materials Research Society 1998

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References

1. Wu, I.-W., Jackson, W.B., Huang, T.-Y., Lewis, A.G., and Chiang, A., IEEE Electron Device Lett. 11, 167 (1990).Google Scholar
2. Lyding, J.W., Hess, K., and Kizilyalli, I.C., Appl. Phys. Lett. 68, 2526 (1996).Google Scholar
3. Hess, K., Kizilyalli, I.C., and Lyding, J.W., IEEE Trans. Electron Devices 45, 406 (1998).Google Scholar
4. Sugiyama, S., Yang, J., and Guha, S., Appl. Phys. Lett. 70, 378 (1997).Google Scholar
5. Johnson, N.M, Biegelsen, D.K., and Moyer, M.D., Appl. Phys. Lett. 40, 882 (1982).Google Scholar
6. Singh, H.J., Saraswat, K.C., Shott, J.D., McVittie, J.P., and Meindl, J.D., IEEE Electron Device Lett. 6, 139 (1985).Google Scholar
7. Cao, M., Zhao, T., Saraswat, K.C., and Plummer, J.D., IEEE Trans. Electron Devices 42, 1134 (1995).Google Scholar
8. Lee, K.Y., Fang, Y.K., Chen, C.W., Huang, K.C., Liang, M.S., and Wuu, S.G., IEEE Electron Device Lett. 18, 382 (1997).Google Scholar