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Properties of RF Sputtered ZnTe:N films for Back Contact to CdS/CdTe Solar Cells

Published online by Cambridge University Press:  21 March 2011

Jennifer Drayton ,
A. Gupta ,
K. Makhratchev ,
K. J. Price ,
R. G. Bohn  and
A.D. Compaan
Jennifer Drayton
Affiliation:
Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio, 43606
A. Gupta
Affiliation:
Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio, 43606
K. Makhratchev
Affiliation:
Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio, 43606
K. J. Price
Affiliation:
Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio, 43606
R. G. Bohn
Affiliation:
Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio, 43606
A.D. Compaan
Affiliation:
Department of Physics and Astronomy, The University of Toledo, Toledo, Ohio, 43606
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Abstract

Most of the low resistance back contacts formed on high efficiency CdS/CdTe solar cells involve copper either in elemental form (such as Cu/Au back contacts) or as dopant in other material (such as Cu-doped ZnTe). But copper is also suspected to be a cause of degradation of devices in long-term stability tests due to its high diffusion coefficient in polycrystalline CdTe. In this paper, we present results on the development of nitrogen-doped ZnTe back contacts for CdS/CdTe solar cells. Reproducible N-doped p-ZnTe films were prepared using reactive RF magnetron sputtering with Ar/N2 gas mixtures. The conductivity of the doped ZnTe films was more than five orders of magnitude higher than that of intrinsic films. We find that annealing in air can further increase the conductivity. Efficiencies near 10% have been achieved with a ZnTe:N/Ni back contact.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 668: Symposium H – II-IV Compound Semiconductor Photovoltaic Materials , 2001 , H5.9
Copyright
Copyright © Materials Research Society 2001

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References

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