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Heat conduction in silicon thin films: Effect of microstructure

Published online by Cambridge University Press:  03 March 2011

Lanhua Wei*
Affiliation:
Ceramics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899
Mark Vaudin
Affiliation:
Ceramics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899
Cheol Song Hwang*
Affiliation:
Ceramics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899
Grady White
Affiliation:
Ceramics Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899
Jason Xu
Affiliation:
Nanoelectronics Laboratory, University of Cincinnati, Cincinnati, Ohio 45221
Andrew J. Steckl
Affiliation:
Nanoelectronics Laboratory, University of Cincinnati, Cincinnati, Ohio 45221
*
a)Guest Scientist, on leave from Department of Physics and Astronomy, Wayne State University, Detroit, Michigan 48201.
b)Guest Scientist, on leave from Department of Inorganic Materials Engineering, Seoul National University, Seoul, Korea.
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Abstract

A study was made of the thermal properties of low pressure chemical vapor deposition (LPCVD) silicon thin films with amorphous and polycrystalline microstructures, produced by varying the substrate temperature. Thermal diffusivity measurements were conducted using a thermal wave technique. The thermal diffusivity of the polycrystalline films was found to be about three times that of the amorphous films, but about one eighth that of bulk silicon single crystals. There was also an indication that the diffusivity increased with deposition temperature above the transition temperature from the amorphous to the polycrystalline state. The relationships between the thermal properties and microstructural features, such as grain size and grain boundary, are discussed.

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Articles
Copyright
Copyright © Materials Research Society 1995

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References

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