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Melting Phenomena and Interfacial Instability Associated with Laser Irradiation*

Published online by Cambridge University Press:  15 February 2011

J. Narayan
J. Narayan*
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37830
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Abstract

The work on annealing of displacement damage, dissolution of boron precipitates, dopant redistribution and formation of constitutional supercooling cells using pulsed ruby and dye laser irradiation is reviewed in order to provide convincing evidence for melting as a primary mechanism of laser annealing. The nature of the liquid-solid interface and the interfacial instability during laser-induced rapid crystal growth are considered in detail. Solute concentrations after laser annealing can far exceed retrograde solubility limits, but there is a critical concentration above which a planar liquid-solid interface becomes unstable and breaks into cellular structures. The solute concentrations and cell sizes associated with this instability have been studied as a function of crystal-growth velocity and these results compared with calculations of the perturbation theory. Good agreement between the experimental results and the theory was obtained when the dependence of the distribution coefficient upon crystal growth velocity was taken into account in the calculations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 141
Copyright
Copyright © Materials Research Society 1982

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Footnotes

*

Research sponsored by the Division of Materials Sciences, U. S. Department of Energy under contract W–7405–eng–26 with Union Carbide Corporation.

References

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