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Interfacial reactions in the Nb/GaAs system

Published online by Cambridge University Press:  31 January 2011

Kevin J. Schulz ,
Xiang-Yun Zheng  and
Y. Austin Chang
Kevin J. Schulz
Affiliation:
IBM Application Business Systems, Rochester, Minnesota 55901
Xiang-Yun Zheng
Affiliation:
University of Wisconsin-Madison, Department of Metallurgical and Mineral Engineering, 1509 University Avenue, Madison, Wisconsin 53706
Y. Austin Chang
Affiliation:
University of Wisconsin-Madison, Department of Metallurgical and Mineral Engineering, 1509 University Avenue, Madison, Wisconsin 53706
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Abstract

Solid-state reactions between niobium and gallium arsenide in both thin film and bulk forms were studied in the temperature range 400 to 1000 °C using transmission electron microscopy (TEM), metallography, scanning electron microscopy (SEM), and electron probe microanalysis (EPMA). Initially Nb4As3 and Nb5Ga3 formed at the interface and grew very slowly. Following an incubation period, NbAs and NbGa, nucleated and grew at rates several orders of magnitude faster than the initial phases. The resulting metastable diffusion path, Nb/NbGa3/NbAs/GaAs, was observed even after relatively long-term annealing and is believed to be kinetically stabilized. Formation of the other Nb–Ga binary compounds as predicted by the phase diagram was inhibited by nucleation and kinetic barriers. The observed reaction sequence is discussed considering the thermodynamics, kinetics, and possible growth mechanisms involved in the reaction.

Type
Articles
Information
Journal of Materials Research , Volume 4 , Issue 6 , December 1989 , pp. 1462 - 1472
Copyright
Copyright © Materials Research Society 1989

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References

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