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High Temperature Annealing of Simox Layers Physical Mechanisms of Oxygen Segregation

Published online by Cambridge University Press:  28 February 2011

C. Jaussaud ,
J. Margail ,
J. Stoemenos  and
M. Bruel
C. Jaussaud
Affiliation:
C.E.A./I.R.D.I./D.L.E.T.I. 85 X - 38041 GRENOBLE Cedex (France)
J. Margail
Affiliation:
C.E.A./I.R.D.I./D.L.E.T.I. 85 X - 38041 GRENOBLE Cedex (France)
J. Stoemenos
Affiliation:
University of Thessaloniki, Thessaloniki (Greece)
M. Bruel
Affiliation:
C.E.A./I.R.D.I./D.L.E.T.I. 85 X - 38041 GRENOBLE Cedex (France)
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Abstract

High temperature annealing of Simox wafers (T > 1300°C), has been proved to dramaticaly increase the quality of the SOI structure.

The heat treatment leads to a redistribution of the implanted oxygen, opposite to its concentration profile, towards the buried layer.

This paper describes from a thermodynamical point of view the SiO2 precipitates dissolution. The physical mechanisms of the oxygen migration are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 107: Symposium H – Silicon-on-Insulator and Buried Metals in Semiconductors , 1987 , 17
Copyright
Copyright © Materials Research Society 1988

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