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Comparative Study on Three Types of Ordered Structures (TP-A, CuPt-A, CuPt-B) in AlInAs, GaInAs, AIInP, and GaInP – Bonding Energy Difference Effects.

Published online by Cambridge University Press:  10 February 2011

A. Gomyo ,
T. Suzuki ,
K. Makita ,
M. Sumino  and
I. Hino
A. Gomyo
Affiliation:
NEC Corporation, Opto-Electronics Research Laboratories, 34 Miyukigaoka, Tsukuba, Ibaraki, 305 Japan
T. Suzuki
Affiliation:
NEC Corporation, Opto-Electronics Research Laboratories, 34 Miyukigaoka, Tsukuba, Ibaraki, 305 Japan
K. Makita
Affiliation:
NEC Corporation, Opto-Electronics Research Laboratories, 34 Miyukigaoka, Tsukuba, Ibaraki, 305 Japan
M. Sumino
Affiliation:
NEC Corporation, Opto-Electronics Research Laboratories, 34 Miyukigaoka, Tsukuba, Ibaraki, 305 Japan
I. Hino
Affiliation:
NEC Corporation, Opto-Electronics Research Laboratories, 34 Miyukigaoka, Tsukuba, Ibaraki, 305 Japan
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Abstract

Comparative study on the formation of the three types of ordered structures (TP-A,CuPt-A, and CuPt-B) on group III sublattice in III-III-V type alloys are made for four kinds of alloys of AlInAs, GaInAs, AlInP, and GaInP grown by gas source molecular beam epitaxy. The bonding energy difference between the constituent binaries of a IIIA - IIIB-V type alloy is demonstrated to be an important factor for the ordered structure formation. The implications of the result for the formation mechanism is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 91
Copyright
Copyright © Materials Research Society 1996

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