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Light Induced Change in a-Si:H p-i-n Solar Cells Under Various Light Soaking Conditions

Published online by Cambridge University Press:  26 February 2011

H. Sakai
Affiliation:
Fuji Electric Co. Research and Development, Ltd., 2-2-1 Nagasaka, Yokosuka, Kanagawa 240-01, Japan
T. Ihara
Affiliation:
Fuji Electric Co. Research and Development, Ltd., 2-2-1 Nagasaka, Yokosuka, Kanagawa 240-01, Japan
O. Nabeta
Affiliation:
Fuji Electric Co. Research and Development, Ltd., 2-2-1 Nagasaka, Yokosuka, Kanagawa 240-01, Japan
T. Yoshida
Affiliation:
Fuji Electric Co. Research and Development, Ltd., 2-2-1 Nagasaka, Yokosuka, Kanagawa 240-01, Japan
K. Maruyama
Affiliation:
Fuji Electric Co. Research and Development, Ltd., 2-2-1 Nagasaka, Yokosuka, Kanagawa 240-01, Japan
Y. Ichikawa
Affiliation:
Fuji Electric Co. Research and Development, Ltd., 2-2-1 Nagasaka, Yokosuka, Kanagawa 240-01, Japan
Y. Uchida
Affiliation:
Fuji Electric Co. Research and Development, Ltd., 2-2-1 Nagasaka, Yokosuka, Kanagawa 240-01, Japan
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Abstract

Lihgt-induced change in photovoltaic performance of p-i-n solar cell was studied. The behavior of degradation of the solar cell strongly depends on the intensity and the spectrum of illumination light. The results of these light soaking tests are presented and discussed. On the basis of these results, the superiority of double-stacked a-Si/a-Si tandem solar cells is discussed.

Type
Research Article
Copyright
Copyright © Materials Research Society 1987

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References

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