Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-16T23:16:02.114Z Has data issue: false hasContentIssue false
  • English
  • Français

Contact Effects in High Mobility Microcrystalline Silicon Thin-Film Transistors

Published online by Cambridge University Press:  01 February 2011

Kah Yoong Chan ,
Eerke Bunte ,
Helmut Stiebig  and
Dietmar Knipp
Kah Yoong Chan
Affiliation:
k.chan@iu-bremen.de, Jacobs University Bremen, School of Engineering and Science, Research Center Jülich, Institute of Photovoltaics, 52425 Juelich, Germany, Juelich, 52425, Germany, +49-2461-61-2069, +49-2461-61-3735
Eerke Bunte
Affiliation:
e.bunte@fz-juelich.de, Research Center Jülich, Institute of Photovoltaics, Jülich, 52425, Germany
Helmut Stiebig
Affiliation:
h.stiebig@fz-juelich.de, Research Center Jülich, Institute of Photovoltaics, Jülich, 52425, Germany
Dietmar Knipp
Affiliation:
d.knipp@iu-bremen.de, Jacobs University Bremen, School of Engineering and Science, Campus Ring 1, Bremen, 28759, Germany
Get access

Abstract

Microcrystalline silicon (mc-Si:H) has recently been proven to be a promising material for thin-film transistors (TFTs). We present mc-Si:H TFTs fabricated by plasma-enhanced chemical vapor deposition at temperatures below 200°C in a condition similar to the fabrication of amorphous silicon TFTs. The mc-Si:H TFTs exhibit device mobilities exceeding 30 cm2/Vs and threshold voltages in the range of 2.5V. Such high mobilities are observed for long channel devices (50-200 mm). For short channel device (2 mm), the mobility reduces to 7 cm2/Vs. Furthermore the threshold voltage of the TFTs decreases with decreasing channel length. A simple model is developed, which explains the observed reduction of the device mobility and threshold voltage with decreasing channel length by the influence of drain and source contacts.

Keywords

devicesplasma-enhanced CVD (PECVD) (deposition)thin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A11-03
Copyright
Copyright © Materials Research Society 2007

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Tsukada, T., Technology and Applications of Amorphous Silicon, Springer Series in Material Science, 37, edited by Street, R. A. (Springer-Verlag, Berlin, Germany, 2000).Google Scholar
2 French, I. D., Deane, S. C. and Cabarrocas, P. R. I., Asia Display, IDW'01, 367 (2001).Google Scholar
3 Dimitrakopoulos, C. D. and Malenfant, P. R. L., Adv. Mater. (Weinheim, Ger.) 14, 99 (2002).Google Scholar
4 Kelley, T. W., Baude, P. F., Gerlach, C., Ender, D. E., Muyres, D., Haase, M. A., Vogel, D. E. and Theiss, S. D., Chem. Mater. 16, 4413 (2004).Google Scholar
5 Knipp, D., Muck, T., Benor, A. and Wagner, V., J. of Non-Cryst. Solids 352, 1774 (2006).Google Scholar
6 Cheng, I.-C. and Wagner, S., Appl. Phys. Lett. 80, 440 (2002).Google Scholar
7 Lee, C.-H., Sazonov, A. and Nathan, A., Appl. Phys. Lett. 86, 222106 (2005).Google Scholar
8 Saboundji, A., Coulon, N., Gorin, A., Lhermite, H., Mohammed-Brahim, T., Fonrodona, M., Bertomeu, J. and Andreu, J., Thin Solid Films 487, 227 (2005).Google Scholar
9 Guo, L., Kondo, M., Fukawa, M., Saitoh, K. and Matsuda, A., Jpn. J. Appl. Phys. 37, L1116 (1998).Google Scholar
10 Rech, B., Roschek, T., Repmann, T., Müller, J., Schmitz, R. and Appenzeller, W., Thin Solid Films 427, 157 (2003).Google Scholar
11 Brammer, T. and Stiebig, H., J. Appl. Phys. 94, 1035 (2003).Google Scholar
12 Jun, K.-H., Carius, R. and Stiebig, H., Physical Review B 66, 1153011 (2002).Google Scholar
13 Ma, Y., Yasuda, T. and Lucovsky, G., J. Vac. Sci. Technol. A 11, 952 (1993).Google Scholar
14 Hsieh, S. W., Chang, C. Y. and Hsu, S. C., J. Appl. Phys. 74, 2638 (1993).Google Scholar
15 Chan, K.-Y., Bunte, E., Stiebig, H. and Knipp, D., J. Appl. Phys. 101, 074503 (2007).Google Scholar
16 Luan, S. and Neudeck, G. W., J. Appl. Phys. 72, 766 (1992).Google Scholar