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Fabrication and Electrical Characterization of Metal-Silicide Nanocrystals for Nano Floating Gate Nonvolatile Memory

Published online by Cambridge University Press:  31 January 2011

Seung Jong Han ,
Ki Bong Seo ,
Dong Uk Lee ,
Eun Kyu Kim ,
Se-Mam Oh  and
Won-Ju Cho
Seung Jong Han
Affiliation:
halbe82@hanmail.net, Hanyang University, Physics, Seoul, Korea, Republic of
Ki Bong Seo
Affiliation:
tjrlqhd@naver.com, Hanyang University, Physics, Seoul, Korea, Republic of
Dong Uk Lee
Affiliation:
kom7807@gmail.com, Hanyang University, Physics, Seoul, Korea, Republic of
Eun Kyu Kim
Affiliation:
ek-kim@hanyang.ac.kr, Hanynag University, Physics, 17 Haengdang-dong, Seongdong-gu, Seoul, 133-791, Korea, Republic of
Se-Mam Oh
Affiliation:
ohminy@nate.com, Kwangwoon University, Electronic Materials Engineering, Seoul, Korea, Republic of
Won-Ju Cho
Affiliation:
chowj@kw.ac.kr, Kwangwoon University, Electronic Materials Engineering, Seoul, Korea, Republic of
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Abstract

We have fabricated the nano-floating gate memory with the TiSi2 and WSi2 nanocrystals embedded in the dielectrics. The TiSi2 and WSi2 nanocrystals were created by using sputtering and rapidly thermal annealing system, and then their morphologies were investigated by transmission electron microscopy. These nanocrystals have a spherical shape with an average diameter of 2-5 nm. The electrical properties of the nano-floating gate memory with TiSi2 and WSi2 nanocrystals were characterized by capacitance-voltage (C-V) hysteresis curve, memory speed and retention. The flat-band voltage shifts of the TiSi2 and WSi2 nanocrystals capacitors obtained appeared up to 4.23 V and 4.37 V, respectively. Their flat-band voltage shifts were maintained up to 1.6 V and 1 V after 1 hr.

Keywords

memorydeviceselectrical properties
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1160: Symposium H – Materials and Physics for Nonvolatile Memories , 2009 , 1160-H04-02
Copyright
Copyright © Materials Research Society 2009

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