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Chemical Data Writing into Metal/oxide Interface: Characterization of Low Dimensional Interface Reactions by I-V Measurements

Published online by Cambridge University Press:  01 February 2011

Masashi Ishii ,
Aiko Nakao  and
Kenji Sakurai
Masashi Ishii
Affiliation:
ISHII.Masashi@nims.go.jp, National Institute for Materials Science, X-ray laboratory, 1-2-1 Sengen, Tsukuba, Ibaraki 305 0047, Japan, +81-29-860-4576, +81-29-859-2801
Aiko Nakao
Affiliation:
anakao@riken.jp, RIKEN, Beam application, 1-1 Hirosawa, Wako, Saitama 351-0198, Japan
Kenji Sakurai
Affiliation:
sakurai@yuhgiri.nims.go.jp, National Institute for Materials Science, X-ray Laboratory, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
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Abstract

We investigated electric and chemical properties of metal/Y2O3 interfaces. The Pt/Y2O3 interface can be chemically activated by bias voltage, resulting in a microscopic oxidation-reduction center at interface. The oxidation-reduction of the center alternatively changed resistance of the Pt/Y2O3 system, and the alternation yield hysteresis with respect to the bias voltage, i.e. a memory effect. On the other hand, in Au/Y2O3 system, non-oxidization of Au induced ejection of O2 gas from the interface, so that there was no memory effect. Possible reactions of these metal/Y2O3 systems were proposed, and the balance between oxidation and reduction at microscopic center was concluded to be essential for the memory effect.

Keywords

chemical reactionelectrical propertiesmicrostructure
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1056: Symposium HH – Nanophase and Nanocomposite Materials V , 2007 , 1056-HH11-64
Copyright
Copyright © Materials Research Society 2008

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References

REFERENCES

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