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Effects of Hydrogen Coverage on Silicon Surface Reactivity

Published online by Cambridge University Press:  25 February 2011

A.C. Dillon ,
M.B. Robinson ,
S.M. George  and
P. Gupta
A.C. Dillon
Affiliation:
Department of Chemistry and Biochemistry, Univ. of ColoradoBoulder, Colorado 80309
M.B. Robinson
Affiliation:
Department of Chemistry and Biochemistry, Univ. of ColoradoBoulder, Colorado 80309
S.M. George
Affiliation:
Department of Chemistry and Biochemistry, Univ. of ColoradoBoulder, Colorado 80309
P. Gupta
Affiliation:
Intel Corporation Santa Clara, California 95052
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Abstract

Hydrogen passivation of silicon surfaces plays an important role in silicon surface cleaning and preparation. To measure the effect of hydrogen passivation on silicon surface reactivity, Fourier transform infrared (FTIR) transmission spectroscopy was used to monitor the oxidation of silicon surfaces versus hydrogen coverage. Experiments were performed insitu in an ultrahigh vacuum (UHV) chamber using high surface area poroussilicon samples. Si-H stretching and bending vibrations and Si-O-Si stretching vibrations were employed to monitor the silicon surface species. Oxidation studies with O2 conducted versus various initial hydrogen coverages revealed that oxidation rates and apparent oxygen saturation levels on porous silicon decreased as a function of initial surface hydrogen coverage. Exceptional surface stability was observed when the porous silicon surface was passivated by both monohydride and dihydride surface species. In addition, new blue-shifted Si-H stretching and bending features were observed following the oxidation of partially hydrogen-passivated porous silicon which indicated the presence of Ox SiH species. Thermal annealing studies revealed that the thermal stability of these OxSiH species increased with increasing oxidation of the silicon surface. These results have important implications for silicon growth and surface cleaning because they indicate that hydrogen removal is more difficult when the silicon surface is contaminated with oxygen. These FTIR results have also been compared with earlier results of oxidation versus hydrogen coverage on Si(111) 7×7.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 259: Symposium B – Chemical Surface Preparation, Passivation and Cleaning for Semiconductor Growth and Processing , 1992 , 99
Copyright
Copyright © Materials Research Society 1992

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References

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