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Adsorption in Ordered Porous Silicon: a Reconsideration of the Origin of the Hysteresis Phenomenon in the Light of new Experimental Observations

Published online by Cambridge University Press:  21 March 2011

B. Coasne ,
A. Grosman ,
N. Dupont-Pavlovsky ,
C. Ortega  and
M. Simon
B. Coasne
Affiliation:
Groupe de Physique des Solides, UMR 7588, Universités Paris 7&6, 2 Place Jussieu 75251 Paris Cedex 05, France
A. Grosman
Affiliation:
Groupe de Physique des Solides, UMR 7588, Universités Paris 7&6, 2 Place Jussieu 75251 Paris Cedex 05, France
N. Dupont-Pavlovsky
Affiliation:
Laboratoire de Chimie du Solide Minéral, UMR 7555 CNRS, BP 239, 54520 Vandoeuvre les Nancy Cedex, France
C. Ortega
Affiliation:
Groupe de Physique des Solides, UMR 7588, Universités Paris 7&6, 2 Place Jussieu 75251 Paris Cedex 05, France
M. Simon
Affiliation:
Groupe de Physique des Solides, UMR 7588, Universités Paris 7&6, 2 Place Jussieu 75251 Paris Cedex 05, France
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Abstract

Porous silicon formed in p+ single crystal silicon is an interesting material for the study of the behavior of a fluid confined in mesoporous media, because it is a simple system of non interconnected straight pores, all perpendicular to the substrate and it can be well characterized by different methods. Moreover, the pores may be closed at one end when the porous layer is supported by the substrate or opened at both ends when the layer is removed from the substrate. Surprising results have been obtained. A hysteresis loop of type H2 (IUPAC classification), which is generally obtained for highly interconnected porous material, is also observed. Furthermore, a hysteresis of same type is also observed in pores closed at one end which is in contradiction with the Cohan model. The steep desorption process does not account for the large pore size distribution extracted from transmission electronic microscopy study. It is believed that, during the desorption process, the presence of an adsorbed layer on the external surface of the pores and/or the coupling between the pores via the silicon walls must be taken into account.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 651: Symposium T – Dynamics in Small Confining Systems V , 2000 , T6.5.1
Copyright
Copyright © Materials Research Society 2001

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