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Blistering and Splitting in Hydrogen-implanted Silicon

Published online by Cambridge University Press:  01 February 2011

E. Ntsoenzok ,
H. Assaf  and
S. Ashok
E. Ntsoenzok
Affiliation:
CERI-CNRS, 3A rue de la Férollerie, 45071 Orléans CEDEX, France
H. Assaf
Affiliation:
CERI-CNRS, 3A rue de la Férollerie, 45071 Orléans CEDEX, France
S. Ashok
Affiliation:
Department of Engineering Science and Mechanics, The Pennsylvania State University, 212 Earth and Engineering Science Building, University Park, PA 16802, USA
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Abstract

We implanted hydrogen in silicon with energies ranging from 500 keV to 2 MeV for implant depths varying from 6.1 to 48.4 μm according to TRIM (transport of ions in matter) 2003. After implantation, a 600 °C thermal annealing was applied to all samples. It is found that for depths lower than 9 μm there is no lift-off of a free-standing silicon layer; only a blistering phenomenon is seen. Increase in the implanted dose or thermal budget does not improve the situation. However, for depths ≥9 μm (9 - 50 μm in this study) thermal annealing results in effective detachment of ultra-thin free-standing layers. This technique hence provides high quality thin Si layers for semiconductor technology.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E9.8
Copyright
Copyright © Materials Research Society 2005

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References

[1] Agere Systems Inc., White Paper, March 2003.Google Scholar
[2] Bruel, M., Aspar, B., Auberton-Herve, A. J., Jpn. J. Appl. Phys. 36, 1631 (1997).Google Scholar
[3] Grisolia, J., Ph.D thesis, Paul Sabatier University, Toulouse, France (2000).Google Scholar
[4] Bruel, M., Electron. Lett. 31, 1144 (1995).Google Scholar
[5] Hochbauer, T., Misra, A., Verda, R., Nastasi, M., Mayer, J. W., Zheng, Y., Lau, S. S., Phil. Mag. B 80, 1921 (2000)Google Scholar
[6] Qian, C., Terreault, B., J.Appl. Phys. 90, 5152 (2001)Google Scholar
[7] Virginia Semiconductor, Inc (VSI), www.virginiasemi.com.Google Scholar