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Application of Desorption Mass Spectrometry to Molecular Beam Epitaxy

Published online by Cambridge University Press:  22 February 2011

Keith R. Evans
Keith R. Evans*
Affiliation:
WL/ELRA, Solid State Electronics Directorate, Wright Laboratory, WPAFB, OH
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Abstract

Molecular beam epitaxy (MBE) is the most powerful crystal growth technique available in terms of the range of structures which can be produced. However, further advances in MBEprocess monitoring and control are required to produce the most demanding structures. Also, process yield, cost, and throughput must be improved for MBE to gain in production worthiness. Because of these issues, there currently is much research activity focusing on the development of advanced in-situ sensors for improved growth parameter monitoring and control. Desorption mass spectrometry (DMS) is an in-situ sensor technique for detecting species leaving the substrate during MBE growth processing. Since in general all surface processes affect desorption rates, and all growth parameters affect surface processes, DMS can be utilized to monitor a variety of MBE growth parameters and phenomena. Theimplementation of simple feedback techniques which link DMS error signals to changes in one or more growth parameters then provides for continuous control of desorption rates. This paper reviews some of the most recent accomplishments in the application of DMS forimproved growth parameter monitoring and control. Additionally, anticipated future directions in the application of DMS to epitaxial growth are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 13
Copyright
Copyright © Materials Research Society 1994

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References

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