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The Formation of Striped Phases by Charge Localization in Vanadium Phosphates

Published online by Cambridge University Press:  18 March 2011

Ranko P. Bontchev ,
Junghwan Do  and
Allan J. Jacobson
Ranko P. Bontchev
Affiliation:
Department of Chemistry, University of Houston, Houston, TX 77204-5641, USA
Junghwan Do
Affiliation:
Department of Chemistry, University of Houston, Houston, TX 77204-5641, USA
Allan J. Jacobson
Affiliation:
Department of Chemistry, University of Houston, Houston, TX 77204-5641, USA
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Abstract

The compound (H3O)1.5{[VO(H2O)]PO4}3·2.5H2O is a new member of a series of vanadium phosphates containing vanadium in both plus four and five oxidation states. Charge ordering occurs in these mixed vanadium phosphate layered compounds forming striped phases with different periodicities. The VOPO4 layers undulate as a consequence of differences in the O-O atom distances in the ordered V(V)O6 and V(IV)O6 octahedra.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 658: Symposium GG – Solid-State Chemistry of Inorganic Materials III , 2000 , GG1.7
Copyright
Copyright © Materials Research Society 2001

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References

REFERENCES

1. Ladwig, G., Z. Anorg. Allg. Chemie, 338, 266 (1965).Google Scholar
2. Tietze, H., Aust. J. Chem., 34, 2035 (1981).Google Scholar
3. Johnson, J. W., Jacobson, A. J., Brody, J. F., and Rich, S. M., Inorg. Chem., 21, 3820 (1982).Google Scholar
4. Johnson, J. W., and Jacobson, A. J., Angew. Chem. Int. Ed. Engl., 22, 412 (1983).Google Scholar
5. Jacobson, A. J., Johnson, J. W., Brody, J. F., Scanlon, J. C., and Lewandowski, J. W., Inorg. Chem., 24, 1782 (1985).Google Scholar
6. Amoros, P., Marcos, M. Dolores, Beltran-Porter, A., and Beltran-Porter, D., Current Opinions in Solid State and Materials Science, 4, 123 (1999).Google Scholar
7. Kalousova, J., Votinsky, J., Benes, L., Melanova, K., Zima, V., Collect. Czech. Chem. Commun., 63, 1 (1998).Google Scholar
8. Kang, H. Y., Lee, W. C., Wang, S. L., and Lii, K.-H., Inorg. Chem., 31, 4743 (1992).Google Scholar
9. Lii, K.-H., Wu, L.-S., and Gau, H.-M., Inorg.Chem., 32, 4153 (1993).Google Scholar
10. Haushalter, R. C., Soghomonian, V., and Chen, Q., J. Solid State Chem., 105, 512 (1993).Google Scholar
11. Zhang, Y., Clearfield, A., and Haushalter, R. C., J. Solid State Chem., 117, 157 (1995).Google Scholar
12. Roca, M., Marcos, M. Dolores, Amoros, P., Alamo, J., Beltran-Porter, A., and Beltran-Porter, D., Inorg. Chem., 36, 3414 (1997).Google Scholar
13. Wang, S. L., Kang, H. Y., Cheng, C. Y., and Lii, K.-H., Inorg. Chem., 30, 3496 (1991).Google Scholar
14. Yamase, T., and Makino, H., J.Chem. Soc. Dalton Trans., 1143 (2000).Google Scholar
15. Papoutsakis, D., Jackson, J. E., and Nocera, D. G., Inorg. Chem., 35, 800 (1996).Google Scholar
16. Liu, L., Wang, X., Bontchev, R., Ross, K., and Jacobson, A. J., J. Mat. Chem., 9, 1585 (1999).Google Scholar
17. Do, J., Bontchev, R. P., and Jacobson, A. J., Inorg. Chem., 39, 3230 (2000).Google Scholar
18. Do, J., Bontchev, R. P., Jacobson, A. J., J. Solid State Chem., in press (2000).Google Scholar
19. Harrison, W. T. A., Hsu, K., Jacobson, A. J., Chem. Mater., 7, 2004 (1995).Google Scholar
20. Brese, N. E., O'Keeffe, M., Acta Crystallogr., B47, 192 (1991).Google Scholar
21. Sheldrick, G. M., Program SADABS, University of Gottingen, 1995; b) G. M. Sheldrick, SHELXTL, Version 5.03, Siemens Analytical X-ray Instruments, Madison, WI, 1995; c) G. M. Sheldrick, SHELX-96 Program for Crystal Structure Determination, 1996.Google Scholar