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A Comparative Study of Hydrogenated Amorphous Silicon Films Prepared by RF Sputtering in He/H2, Ar/H2 and Xe/H2 Mixtures

Published online by Cambridge University Press:  28 February 2011

Mark L. Albers ,
H. R. Shanks  and
J. Shinar
Mark L. Albers
Affiliation:
Ames Laboratory-USDOE and Department of Physics Iowa State University, Ames, Iowa 50011
H. R. Shanks
Affiliation:
Ames Laboratory-USDOE and Department of Physics Iowa State University, Ames, Iowa 50011
J. Shinar
Affiliation:
Ames Laboratory-USDOE and Department of Physics Iowa State University, Ames, Iowa 50011
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Abstract

Preliminary results of a comparative study of some optical and ESR properties of aSi:H films prepared by rf sputtering on a cold substrate in 10 mtorr of either He, Ar, or Xe and 0.5 mtorr H2 are presented. In all cases the concentration of Si-H and Si-H2 bonds, the optical gap and the dangling bond spin density all generally increase as the rf power is decreased from 3.3 to 0.27 W/cm2. However, whereas the optical energy gap of He/H2 sputtered films ranges from 1.26 eV to 2.13 eV, the gap of Ar/H2 and Xe/H2 films sputtered under these conditions only changes from 1.54 to 1.94 and 1.41 to 1.71 eV, respectively. The dangling bond spin densities are lowest (~1017 cm-3) in the Ar/H2 sputtered films at high rf power and highest (~5x1018 cm-3) in Xe/H2 sputtered films at low power.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 70: Symposium E – Materials Issues in Amorphous-Semiconductor Technology , 1986 , 59
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

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