Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-16T16:53:28.604Z Has data issue: false hasContentIssue false
  • English
  • Français

Study of IBAD Deposited AlN Films for Vacuum Diode Electron Emission

Published online by Cambridge University Press:  10 February 2011

E.W. Forsythe ,
J.A. Sprague ,
B.A. Khan ,
S. Metha ,
D.A. Smith ,
I.H. Murzin ,
B. Ahern ,
D. W. Weyburne  and
G. S. Tompa
E.W. Forsythe
Affiliation:
Structured Materials Industries, Inc., 120 Centennial Av., Piscataway, NJ 08854
J.A. Sprague
Affiliation:
Naval Research Laboratory, Surface Modification Branch, Washington, D.C. 20375
B.A. Khan
Affiliation:
N.A. Philips, Briarcliff Manor, NY
S. Metha
Affiliation:
Lehigh University, Bethlehem, PA
D.A. Smith
Affiliation:
Lehigh University, Bethlehem, PA
I.H. Murzin
Affiliation:
Structured Materials Industries, Inc., 120 Centennial Av., Piscataway, NJ 08854
B. Ahern
Affiliation:
ASM International, Hanscom AFB, MA
D. W. Weyburne
Affiliation:
ASM International, Hanscom AFB, MA
G. S. Tompa
Affiliation:
Structured Materials Industries, Inc., 120 Centennial Av., Piscataway, NJ 08854
Get access

Abstract

We have demonstrated the basic operation of a vacuum diode based on the negative electron affinity polycrystalline AlN thin film emitters. The AlN films, both undoped and Ge doped, were deposited by ion beam assisted deposition (IBAD). The IBAD process utilizes thermal evaporation from either electron-beam or resistance heated sources with ion bombardment from Kaufman-type ion sources at energies from 50 to 1500 eV. Films were post-annealed by rapid thermal annealing and long-time tube furnace annealing in a N2 atmosphere to test improvements in crystallinity. The electrical and transport properties of the films were tested by DC l-V measurements. The structure of the AlN films was investigated by TEM, SIMS, optical absorption, and RBS as a function of growth parameters and annealing. The field emission was tested for films with different Ge doping concentrations, film thickness, diode voltage, and post annealing conditions. Field emission was observed for the undoped AlN films with a thickness of approximately 10 nm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 1233
Copyright
Copyright © Materials Research Society 1997

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. “Diamond Films and Coatings: Development, Properties and Applications”, Edited by Davis, Robert F., Noyes Publications (1993).Google Scholar
2. Okano, K., Kiyota, H., Iwasaki, J., Nakamura, Y., Akiba, Y., Kurosu, T., lida, M. and Nakamura, J., Appl. Phys. A. 51, 1990, 344.Google Scholar
3. Davis, R.F., 2nd Workshop on Wide Bandgap Nitrides, Oct. 17, 1994, St. Louis, MO.Google Scholar
4. Nemanich, R.J., Benjamin, M.C., Bozeman, S.P., Bremser, M.D., King, S.W., Ward, B.L., Davis, R.F., Che, B., Zhang, Z., Bernholc, J., “Negative Electron Affinity of AlN and AlGaN Alloys”, MRS Proc, Symp. AA, 1995.Google Scholar
5. Hubler, G.K., Van Vechten, D., Donovan, E.P., and Carosella, C.A., J. Vac. Sci. Technol. A8 (1990) 831–839.Google Scholar
6. “AlN Negative Electron Affinity Surface”, Final Report, Phase I SBIR, Contract Nu. F19628-95-C-0206, 1996.Google Scholar