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Interfacial Reactions Between Amorphous W-Si Thin Films And Polycrystalline Overlayers

Published online by Cambridge University Press:  26 February 2011

R. E. Thomas ,
J. H. Perepezko  and
J. D. Wiley
R. E. Thomas
Affiliation:
Materials Science Center, University of Wisconsin-Madison, 1500 Johnson Drive, Madison, WI 53706
J. H. Perepezko
Affiliation:
Materials Science Center, University of Wisconsin-Madison, 1500 Johnson Drive, Madison, WI 53706
J. D. Wiley
Affiliation:
Materials Science Center, University of Wisconsin-Madison, 1500 Johnson Drive, Madison, WI 53706
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Abstract

Interactions between amorphous metal thin films and either a substrate or an overlayer can limit their effectiveness as diffusion barriers. We have found in previous studies that Au and Al polycrystalline thin films in contact with amorphous W-Si lowers the crystallization temperature of the a-(W-Si) by at least 100C. In contrast Cu and Mo have no apparent effect on the stability of the amorphous layer. The mechanisms leading to premature crystallization are not well understood. Amorphous W .72Si.28 was deposited by D.C. sputtering onto single crystal Si substrates. Overlayers of Al were then evaporated onto the W-Si. Using Auger electron spectroscopy depth profiling coupled with cross-section TEM, we have studied interfacial reactions between the amorphous layer and polycrystalline Al. Auger profiling results show that in the case of Al overlayers, W and Si diffuse out of the a-(W-Si) into the Al where WAl12 forms. These results can be explained in the context of three binary diffusion couples, W-Si, W-Al, Al-Si, and the individual interactions associated with these couples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 127
Copyright
Copyright © Materials Research Society 1986

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References

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