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Dislocations in GaAs/Si Interfaces

Published online by Cambridge University Press:  26 February 2011

Jane G. Zhu ,
S. McKernan ,
C. B. Carter ,
W. J. Schaff  and
L. F. Eastman
Jane G. Zhu
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853;
S. McKernan
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853;
C. B. Carter
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853;
W. J. Schaff
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853.
L. F. Eastman
Affiliation:
School of Electrical Engineering, Cornell University, Ithaca, NY 14853.
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Abstract

Dislocations present at GaAs/Si interfaces have been characterized using transmission electron microscopy in plan-view. The GaAs was grown by molecular-beam epitaxy on Si (001) substrate tilted* towards the [110] direction. The dislocation network at the interface consists primarily of orthogonal edge dislocations with Burgers vectors of a/2[110] and a/2[110]. However, displacements of these dislocation lines at the interface are observed. These displacements can be attributed to the interaction of 60* dislocations with the network of orthogonal edge dislocations. The density of these 60* dislocations along [110] direction is different from that along [110] direction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 285
Copyright
Copyright © Materials Research Society 1989

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References

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