Hostname: page-component-76fb5796d-wq484 Total loading time: 0 Render date: 2024-04-25T22:50:44.207Z Has data issue: false hasContentIssue false
  • English
  • Français

Applications of Pulsed Co2 Laser Processing of Silicon

Published online by Cambridge University Press:  28 February 2011

B. James
B. James*
Affiliation:
Sandia National Laboratories, Livermore, CA 94550
Get access

Abstract

The absorption of CO2 laser radiation in doped silicon is dominated by free-carrier transitions, which is an extrinsic absorption property. For applications where one would like to preferentially deposit the pulse energy in heavilydoped layers, the CO2 laser is found to be preferable to other laser systems that oscillate at a photon energyexceeding the bandgap.The advantages of laser processing with below-bandgap radiation are illustrated by three different applications that areeither impossible or much more difficult to achieve with a visible or ultraviolet laser: (1) the melting of buried layerswithout melting the material that encapsulates the molten layer, (2) the melting of shallow layers at the surface, and(3)the annealing of lattice imperfections caused by high-temperature diffusion of phosphorus dopants into small diffusion wells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 59
Copyright
Copyright © Materials Research Society 1987

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. See, for example, Pulsed Laser Processing of Semiconductors, edited by Wood, R. F., White, C. W. and Young, R. T. (Academic, New York, 1984).Google Scholar
2. Lowndes, D. H., in Pulsed Laser Processing of Semiconductors, Vol. 23, edited by Wood, R. F., White, C. W. and Young, R. T. (Academic, New York, 1984), p. 471.Google Scholar
3. Spitzer, W. G. and Fan, H. Y., Phys. Rev. 106, 882 (1957).Google Scholar
4. Wood, R. F. and Geist, G. E., Phys. Rev. B34, 2606 (1986).Google Scholar
5. James, R. B., Young, R. T., Christie, W. H. and Wood, R. F., in Proc. of the 9th Internat. Conf. on Lasers and Applications, Orlando, Fl, 1986 (STS Press, McLean, VA), in press.Google Scholar
6. James, R. B. and Christie, W. H. (unpublished).Google Scholar
7. Wood, R. F. and Jellison, G. E. Jr., in Pulsed Laser Processing of Semiconductors, Vol. 23, edited by Wood, R. F., White, C. W. and Young, R. T. (Academic, New York, 1984), p. 165.Google Scholar
8. McDonald, R. A., Ehlenberger, G. G. and Huffman, T. R., Solid State Electron. 9, 807 (1966).Google Scholar
9. Jain, R. K. and van Overstraeten, R. J., J. Appl. Phys. 44, 2437 (1973).Google Scholar
10. Young, R. T. and Narayan, J., Appl. Phys. Lett. 33, 14 (1978).Google Scholar
11. James, R. B., Narayan, J., Christie, W. H., Eby, R. E., Holland, O. W. and Wood, R. F., in Energy Beam-Solid Interactions and Transient Thermal Processing, edited by Biegelsen, D. K., Rozgonyi, G. A. and Shank, C. V. (MRS, Pittsburgh, 1985),p. 413.Google Scholar