Hostname: page-component-8448b6f56d-cfpbc Total loading time: 0 Render date: 2024-04-19T16:59:14.014Z Has data issue: false hasContentIssue false
  • English
  • Français

Silicon Single Electron Transistors with Single and Multi Dot Characteristics

Published online by Cambridge University Press:  17 March 2011

Alexander Savin ,
Antti Manninen ,
Jari Kauranen ,
Jukka Pekola ,
Mika Prunnila ,
Jouni Ahopelto ,
Martin Kamp ,
Monika Emmerling  and
Alfred Forchel
Alexander Savin
Affiliation:
Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40351, Finland
Antti Manninen
Affiliation:
Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40351, Finland
Jari Kauranen
Affiliation:
Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40351, Finland
Jukka Pekola
Affiliation:
Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40351, Finland
Mika Prunnila
Affiliation:
VTT Microelectronics Centre, P.O.Box 1101, FIN-02044 VTT, Finland
Jouni Ahopelto
Affiliation:
VTT Microelectronics Centre, P.O.Box 1101, FIN-02044 VTT, Finland
Martin Kamp
Affiliation:
Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
Monika Emmerling
Affiliation:
Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
Alfred Forchel
Affiliation:
Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany
Get access

Abstract

Silicon single electron transistors (SET) with side gate have been fabricated on a heavily doped silicon-on-insulator (SOI) substrate. Samples demonstrate two types of characteristics: some of them demonstrate multiple dot behavior and one demonstrates single dot behavior in a wide temperature range. SETs demonstrate oscillations of drain-source current and changes in the width of the Coulomb blockade region with change of gate voltage at least up to 100 K. At temperature below 20 K long-term oscillations (relaxation) of source-drain current after switching the gate voltage has been observed in both multiple dot and single dot samples. Illumination affects both the characteristics of the SETs and the relaxation process. Telegraph noise has been observed in a definite range of source-drain and gate voltages.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F1.3.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Single Charge Tunneling, ed. Gabert, H. and Devoret, M. H. (Plenum, New York, 1992).Google Scholar
2. Zhuang, L., Guo, L., and Chou, S. Y., Appl. Phys. Lett., 72, 1205 (1998).Google Scholar
3. Ishikuro, H. and Hiramoto, T., Appl. Phys. Lett., 71, 3691 (1997).Google Scholar
4. Ishikuro, H., Fujii, T., Saraya, T., Hashiguchi, G., Hiramoto, T., and Ikoma, T., Appl. Phys. Lett., 68, 3585 (1996).Google Scholar
5. Takahashi, N., Ishikuro, H., and Hiramoto, T., Appl. Phys. Lett., 76, 209 (2000).Google Scholar
6. Stone, N. J. and Ahmed, H., Electron. Lett., 35, 1883 (1999).Google Scholar
7. Ono, Y., Takahashi, Y., Yamazaki, K., Nagase, M., Namatsu, H., Kurihara, K., and Murase, K., Appl. Phys. Lett., 76, 3121 (2000).Google Scholar
8. Nakajama, A., Futatsugi, T., Kosemura, K., Fukano, T., and Yokoyama, N., Appl. Phys. Lett., 70, 1742 (1997).Google Scholar
9. Irvine, A. C., Durrani, Z. A. K., and Ahmed, H., J. Appl. Phys., 87, 8594 (2000).Google Scholar
10. Smith, R. A. and Ahmed, H., J. Appl. Phys., 81, 2699 (1997).Google Scholar
11. Rokhinson, L. P., Guo, L. J., Chou, S. Y., and Tsui, D. C., Appl. Phys. Lett., 76, 1591 (2000).Google Scholar
12. Augke, R., Eberhardt, W., Single, C., Prins, F. E., Wharam, D. A., and Kern, D. P., Appl. Phys. Lett., 76, 2065 (2000).Google Scholar
13. Ohata, A. and Toriumi, A., Jpn. J. Appl. Phys., 38, 2473 (1999).Google Scholar
14. Zorin, A.B., Ahlers, F.-J., Niemeyer, J., Weimann, T., Wolf, H., Krupenin, V.A., and Lotkhov, S.V., Phys. Rev. B, 53, 13682 (1996).Google Scholar
15. Martinis, J. M. and Nahum, M., Phys. Rev. Lett., 72, 904 (1994).Google Scholar
16. Manninen, A., Kauranen, J., Pekola, J., Savin, A., Kamp, M., Emmerling, M., Forchel, A., Prunnila, M., and Ahopelto, J., submitted to Jpn. J. Appl. Phys. (2000).Google Scholar