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Non Linear Optical Gain in Bulk Barrier Amorphous Silicon Phototransistor

Published online by Cambridge University Press:  17 March 2011

D. Caputo ,
G. de Cesare ,
A. Nascetti  and
F. Palma
D. Caputo
Affiliation:
Department of Electronic Engineering, University of Rome “La Sapienza” via Eudossiana 18, 00184, Rome, Italy
G. de Cesare
Affiliation:
Department of Electronic Engineering, University of Rome “La Sapienza” via Eudossiana 18, 00184, Rome, Italy
A. Nascetti
Affiliation:
Department of Electronic Engineering, University of Rome “La Sapienza” via Eudossiana 18, 00184, Rome, Italy
F. Palma
Affiliation:
Department of Electronic Engineering, University of Rome “La Sapienza” via Eudossiana 18, 00184, Rome, Italy
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Abstract

In this work we report studies on the non linear dependence of the optical gain with the incident power in an amorphous silicon bulk barrier phototransistor based on a n-i-p-i-n structure. The optical gain shows a quasi-hyperbolic dependence on the illumination intensity. The non-linear behavior was predicted by an analytical device model which takes into account the properties of both material and structure, which lead to the amplification mechanism of the device.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 609: Symposium A – Amorphous & Heterogeneous Silicon Thin Films – 2000 , 2000 , A12.3
Copyright
Copyright © Materials Research Society 2000

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References

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