Hostname: page-component-76fb5796d-9pm4c Total loading time: 0 Render date: 2024-04-25T16:19:29.990Z Has data issue: false hasContentIssue false
  • English
  • Français

The AuZn/GaAs Heterojunction: Evidence of Varying Solid State Reactions

Published online by Cambridge University Press:  25 February 2011

George J. Vendura ,
Russell Messier ,
Karl Spear ,
Carlo Pantano  and
William Drawl
George J. Vendura
Affiliation:
Solar Union Materials and Microelectronics, Box 124, Los Alamitos, CA 90720
Russell Messier
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
Karl Spear
Affiliation:
Ceramic Science Deparment, The Pennsylvania State University, University Park, PA 16802
Carlo Pantano
Affiliation:
Ceramic Science Deparment, The Pennsylvania State University, University Park, PA 16802
William Drawl
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
Get access

Abstract

Au-Zn is one of several metal systems applied to p-GaAs to form ohmic contacts. Although it exhibits a fair degree of reliability, the thrust toward higher power and adverse environments raises concern. Observations indicate that the electrical and mechanical properties as well as the stability of AuZn/GaAs vary with Zn thickness. In this study devices with thin and thick layers were tested visually, mechanically and using SEM and X-ray diffraction techniques. Results revealed significantly different reactivity and product chemistry that could significantly affect overall device performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 148: Symposium D – Chemistry and Defects in Semiconductor Heterostructures , 1989 , 169
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Braslau, N., Thin Solid Films 104;391–397 (1983).Google Scholar
2. Newman, N., Petro, W.G., Kendelewicz, T., Pan, S.H., Eglash, S.J. and Spicer, W.E., J. Appl. Phys. 57(4);1247–1251 (1985).Google Scholar
3. Robinson, G.Y., Thin Solid Filns 72;129–141 (1980).CrossRefGoogle Scholar
4. Christou, A., Solid State Electronics 22;141–149 (1979).CrossRefGoogle Scholar
5. Miller, D.C., J. Electrochem. Soc. 127(2);467–475 (1980).Google Scholar
6. Tiwari, S., Hintzman, J. and Callegari, A., Appl. Phys. Lett. 51(25);2118–20 (1987).Google Scholar
7. Tandon, J.L., Douglas, K.D., Vendura, G., Kolawa, E., So, F.C.T. and Nicolet, M-A., Tungsten Other Retract.Met. for VLSI Appl., Proc. Workshop 1984-1985:331–340 (Ed. Blewer, R.S.).Google Scholar
8. Piotrowska, A., Guivarch, A. and Pelous, G., Solid State Electronics 26(3);179–197 (1983).Google Scholar