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The Impact of Point Defects on Stress-Induced Dislocation Generation in Silicon

Published online by Cambridge University Press:  17 March 2011

Konstantin V. Loiko ,
Giri Nallapati ,
Keith M. Jarreau ,
Shashank S. Ekbote ,
Roy A. Hensley ,
Dale Simpson ,
Thomas E. Harrington ,
William R. Frensley  and
Igor V. Peidous
Konstantin V. Loiko
Affiliation:
Dallas Semiconductor Corporation, 4401 S. Beltwood Parkway, Dallas, TX 75244-3292, U.S.A
Giri Nallapati
Affiliation:
Dallas Semiconductor Corporation, 4401 S. Beltwood Parkway, Dallas, TX 75244-3292, U.S.A
Keith M. Jarreau
Affiliation:
Dallas Semiconductor Corporation, 4401 S. Beltwood Parkway, Dallas, TX 75244-3292, U.S.A
Shashank S. Ekbote
Affiliation:
Dallas Semiconductor Corporation, 4401 S. Beltwood Parkway, Dallas, TX 75244-3292, U.S.A
Roy A. Hensley
Affiliation:
Dallas Semiconductor Corporation, 4401 S. Beltwood Parkway, Dallas, TX 75244-3292, U.S.A
Dale Simpson
Affiliation:
Dallas Semiconductor Corporation, 4401 S. Beltwood Parkway, Dallas, TX 75244-3292, U.S.A
Thomas E. Harrington
Affiliation:
Dallas Semiconductor Corporation, 4401 S. Beltwood Parkway, Dallas, TX 75244-3292, U.S.A
William R. Frensley
Affiliation:
The University of Texas at Dallas, 2601 N. Floyd Road, Richardson, TX 75083-0688, U.S.A
Igor V. Peidous
Affiliation:
The University of the West Indies, Mona, Kingston 7, Jamaica, West Indies
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Abstract

Factors responsible for the onset of dislocation generation in the fields of localized high stresses have been studied in LOCOS-isolated test structures by means of preferential etching, junction leakage analysis, and computer simulation. A strong correlation between densities of stacking faults and dislocations was observed in the experiments. Defect distributions also correlated to leakage currents. 2D simulations of stresses, interstitial injection, and stacking fault growth during field oxidation showed that maximum resolved shear stress in the structures did not exceed the critical level for dislocation generation and that the agglomeration of silicon interstitial atoms did not play a notable role in dislocation nucleation. Dislocation and stacking fault formation was attributed to surface mechanical damage introduced during plasma processing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B6.13
Copyright
Copyright © Materials Research Society 2000

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References

1. Hu, S. M., J. Appl. Phys., 70 (6), R53 (1991).10.1063/1.349282Google Scholar
2. Vanhellemont, J. and Claeys, C., J. Electrochem. Soc., 135, 1509 (1988).10.1149/1.2096043Google Scholar
3. Peidous, I. V., Sundaresan, R., Quek, E., and Lau, C. K., in Defect and Impurity Engineered Semiconductors II / 1998, ed. Ashok, S., Chevallier, J., Sumino, K., Sopori, B. L., and Götz, W., Mat. Res. Soc. Proc. PV 510 (Warrendale, PA, 1998) p. 269.Google Scholar
4. Loiko, K. V., Peidous, I. V., Zu, Y., and Ho, H. M., J. Electrochem. Soc., 146 (11), 4226 (1999).10.1149/1.1392618Google Scholar
5. Ikeda, S., Hagiwara, Y., Miura, H., and Ohta, H., in IEDM Tech. Dig., pp. 77–80 (1996).Google Scholar
6. Peidous, I. V., Balasubramanian, N., Johnson, E., Gan, C. H., Sundaresan, R., in ULSI Process Integration, ed. Clayes, C. L., Iwai, H., Bronner, G., and Fair, R., Electrochemical Society Proc. PV 99–18 (Pennington, NJ, 1999) pp. 243–254.Google Scholar
7. Hu, S. M., J. Appl. Phys., 45 (4), 1567 (1974).10.1063/1.1663459Google Scholar
8. Lothe, J. and Hirth, J. P., J. Appl. Phys., 38 (2), 845 (1967).10.1063/1.1709423Google Scholar
9. Chaundry, S. and Law, M. E., J. Appl. Phys., 82 (3), 1138 (1997).Google Scholar
10. Bracht, H., in Defects in Silicon III, ed. Abe, T., Bullis, W. M., Kobayashi, S., Lin, W., and Wagner, P., Electrochem. Soc. Proc. PV 99–1 (Pennington, NJ, 1999) pp. 357–371.Google Scholar