Hostname: page-component-8448b6f56d-gtxcr Total loading time: 0 Render date: 2024-04-23T07:15:59.908Z Has data issue: false hasContentIssue false
  • English
  • Français

Surface Photovoltage Monitoring of Silicon Surface Native and Chemical Oxides following Wafer Cleaning and Rinsing Operations

Published online by Cambridge University Press:  15 February 2011

John J. Rosato ,
R. Mark Hall ,
Thad B. Parry ,
Paul G. Lindquist  and
Taura D. Jarvis
John J. Rosato
Affiliation:
Santa Clara Plastics, 400 Benjamin Lane, Boise, ID 83704
R. Mark Hall
Affiliation:
Santa Clara Plastics, 400 Benjamin Lane, Boise, ID 83704
Thad B. Parry
Affiliation:
Santa Clara Plastics, 400 Benjamin Lane, Boise, ID 83704
Paul G. Lindquist
Affiliation:
Santa Clara Plastics, 400 Benjamin Lane, Boise, ID 83704
Taura D. Jarvis
Affiliation:
Santa Clara Plastics, 400 Benjamin Lane, Boise, ID 83704
Get access

Abstract

We report on the use of the Surface PhotoVoltage (SPV) technique to monitor the Si surface bonding arrangement, and the impurity metallic contamination level prior to critical diffusion processes via the indirect measurement of surface charge and diffusion length, respectively. We show that the effectiveness of the pre-diffusion wet chemical cleaning and rinsing sequences can be accurately monitored via the real-time, nondestructive SPV measurement. In particular the nature of the surface passivation/chemical oxide formed during the cleaning and rinsing operations can be monitored by quantitative surface charge measurements. The importance of the prior wafer history is highlighted, as is the role of the Si starting material and measurement parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 386: Symposium O – Ultraclean Semiconductor Processing Technology and Surface , 1995 , 47
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1) Edelman, P., Lagowski, J., Jastrzebski, L., 1992 Proceedings of the MRS, San Francisco, CA, April 1992.Google Scholar
2) Lagowski, J. et al. , SemicondSci Technol, 7, p. A185 (1992).Google Scholar
3) Ohmi, T. et al. , J.Electrochem Soc. 139,11 p.13317(1992).Google Scholar
4) Sze, S.M., Physics of SemicondDev, chap7–8, J.Wiley & Sons (1981).Google Scholar
5) Uyemura, J. P., Fund of MOS Digital Int. Cir., Addison-Wesley(1988).Google Scholar
6) Tsividis, Y.P., Oper & Model of the MOS Transistor, McGraw-Hill (1987).Google Scholar
7) Rosato, J.J. et al. , 1994 Proc of Electrochem Soc., 186th Fall Mtg, Diagn Tech for Semi Mtls & Dev, Miami, FLA(Oct. 1994)Google Scholar
8) Shimizu, H. et al. , 1994 Proc ofInst of Env. Sci, p.297 (1994).Google Scholar
9) Hirose, M. et al. , Sol St. Technol. p.43, (Dec. 1991).Google Scholar
10) Hall, R.M. et al. , Proc.1994 SPWCC, San Jose, CA (1994).Google Scholar
11) Hall, R.M. et al. , 1994 Proc of Electrochem Soc., 186th Fall Mtg, Miami, (1994)Google Scholar