Hostname: page-component-8448b6f56d-42gr6 Total loading time: 0 Render date: 2024-04-19T23:03:46.536Z Has data issue: false hasContentIssue false
  • English
  • Français

Indium Antimonide Nanoparticles Synthesized using Inert Gas Condensation Technique.

Published online by Cambridge University Press:  01 July 2015

Sneha G. Pandya  and
Martin E. Kordesch
Sneha G. Pandya
Affiliation:
Department of Physics and Astronomy, Ohio University, Athens, OH 45701, U.S.A.
Martin E. Kordesch
Affiliation:
Department of Physics and Astronomy, Ohio University, Athens, OH 45701, U.S.A.
Get access

Abstract

Nanoparticles (NPs) of Indium Antimonide (InSb) were synthesized using a vapor phase synthesis technique known as Inert Gas Condensation. NPs were directly deposited, at room temperature and under high vacuum, on glass cover slides, TEM grid, 1 inch-square (111) p-type Silicon wafer and Sodium Chloride substrates. XRD study revealed the crystalline behavior of these NPs exhibiting a cubic symmetry with preferred growth direction of (111). The average grain size of the NPs obtained using XRD results and the Debye-Scherrer formula was 25.62 nm. TEM studies showed a bimodal distribution of NPs with average NPs size of 13.70 and 33.20 nm. These values are consistent with the value obtained using XRD. 1:1 composition ratio of In:Sb was confirmed by the Energy Dispersive X-Ray Spectroscopy studies. The band gap of the NPs obtained using Fourier Transform Infrared (FTIR) spectroscopy was 0.413 eV at 300 K, which indicates quantum confinement in the band structure of these NPs.

Keywords

III-Vnanostructureinfrared (IR) spectroscopy
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1784: Symposium R – Photoactive Nanoparticles and Nanostructures , 2015 , mrss15-2136838
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Lu, W., Chang, A. Y., Schaller, R. D. and Talapin, D. V., J. Am. Chem. Soc. 134, 20258 (2012).CrossRefGoogle Scholar
Li, D., Li, H., Sun, H. and Zhao, L., Nanoscale Research Letters, 6:601(2011).CrossRefGoogle Scholar
Cho, J. and Lim, S., Journal of The Electrochemical Society 155, A825 (2008).CrossRefGoogle Scholar
Zhou, J. F., Chen, Z., He, L. B., Xu, C. H., Yang, L., Han, M. and Wang, G. H., Eur. Phys. J. D 43, 283 (2007).CrossRefGoogle Scholar
vishwakarma, S. R., kumar, A., Tripathi, R. S. N., Das, R. and Das, S., Indian Journal of Pure and Applied Physics 51, 260 (2013).Google Scholar
Mitin, V., Sergeev, A., Vagidov, N. and Birner, S., Infrared Physics and Technology 59, 84 (2013).CrossRefGoogle Scholar
Konstantatos, G., Howard, I., Fischer, A., Hoogland, S., Clifford, J., Klem, E., Levina, L. and Sargent, E. H., Nature Letters 442|13, 180 (2006).Google Scholar
Cai, X. and Wei, J., Journal of Applied Physics 114, 083507 (2013).CrossRefGoogle Scholar
Khan, M. I., Wang, X., Bozhilov, K. N. and Ozkan, C. S., Journal of Nanomaterials 698759, (2008).Google Scholar
Wang, Y., Chi, J., Banerjee, K., Grutzmacher, D., Schapers, T. and Lu, J. G., J. Mater. Chem. 21, 2459 (2011).CrossRefGoogle Scholar
Yang, X., Wang, G., Slattery, P., Zhang, J. Z. and Li, Y., Crystal Growth and Design 10-6, 2479 (2010).CrossRefGoogle Scholar