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New Processing and Evaluation of Porous PZT with High Connectivity Using Capsule-Free O2 HIP

Published online by Cambridge University Press:  15 February 2011

Sunao Sugihara
Affiliation:
Shonan Institute of Technology, Department of Materials Science and Ceramic Technology, Tujido-Nishikaigan, Fujisawa, Japan, 251
Takashi Hayashi
Affiliation:
Shonan Institute of Technology, Department of Materials Science and Ceramic Technology, Tujido-Nishikaigan, Fujisawa, Japan, 251
Kiyoshi Okazaki
Affiliation:
Shonan Institute of Technology, Department of Materials Science and Ceramic Technology, Tujido-Nishikaigan, Fujisawa, Japan, 251
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Abstract

New processing of porous PZT ceramics with high connectivity was investigated using capsule-free O2 HIP technology. Porous PZT bodies were prepared by pressureless-sintering of green compacts with various amounts of spherical PMMA particles, followed by hot isostatically pressed at 1100°C and 200 MPa for 1 hour in 5%O2/Ar mixture gas atmosphere. The densification of porous PZT sintered bodies hardly occurred by capsule-free O2 treatment, resulting in the formation of well-developed neck growth between PZT grains. They exhibted a homogeneous microstructure with a bimodal pore size distribution consisting of both several ¼m and 50–80¼m pore sizes.

The capsule-free O2 HIPed porous PZT bodies have a larger permittivity and a smaller depolarizing factor about a half than the specimens before O2 -HIPing, suggesting that the HIPed PZT has a higher connectivity. Piezoelectric g33 constant-porosity relations were also described and mechanical property was discussed to indicate an increase of bending strength more than 20% compared to conventional sintering.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Skinner, D.P,Newham, R.E. and Cross, L.E.:Mater.Res.Bull.,13, 599(1978).CrossRefGoogle Scholar
[2] Miyashita, M,Takano, K. and Toda, T.:Ferroelectrics,28,397(1980).CrossRefGoogle Scholar
[3] Nagata, K.,Igarashi, H., Okazaki, K. and Bradt, R.C:J.Appl.Phys., 19–1,L37(1980).Google Scholar
[4] Takata, A.,Ishizaki, K. and Okada, S.:Mat.Res.Soc.Sym.Proc.,207, 135(1991).CrossRefGoogle Scholar
[5] Okazaki, K. and Igarashi, H.:Ceramic Microstructure'76,(Westview Press, Boulder,Colorado,1976), P.564.Google Scholar
[6] Igarashi, H.,Tashiro, S. and Okazaki, K.:Mem.Nat.Def.Acad.,19_. 87, No.2,3,4(1979).Google Scholar