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Diethynyl Aryl Derivatives for P-Channel and N-Channel Organic Field-Effect Transistors

Published online by Cambridge University Press:  01 February 2011

Takeshi Yasuda ,
Kimiaki Kashiwagi ,
Yoshitomi Morizawa  and
Tetsuo Tsutsui
Takeshi Yasuda
Affiliation:
yasuda@asem.kyushu-u.ac.jp, Kyushu University, Institute for Material Chemistry and Engineering, Kasuga koen 6-1, Kasuga, Fukuoka, 816-0943, Japan
Kimiaki Kashiwagi
Affiliation:
kimiaki-kashiwagi@agc.co.jp, Asahi Glass Co., Ltd., Research Center, Yokohama, Kanagawa, 221-8755, Japan
Yoshitomi Morizawa
Affiliation:
yoshitomi-morizawa@agc.co.jp, Asahi Glass Co., Ltd., Research Center, Yokohama, Kanagawa, 221-8755, Japan
Tetsuo Tsutsui
Affiliation:
tsuigz@mbox.nc.kyushu-u.ac.jp, Kyushu University, Institute for Material Chemistry and Engineering, Kasuga koen 6-1, Kasuga, Fukuoka, 816-0943, Japan
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Abstract

Organic field-effect transistors (OFETs) consisted of vacuum-evaporated diethynyl aryl derivatives were prepared and the device characteristics were evaluated. The fabricated OFETs showed typical p-type characteristics for diethynyl naphthalene derivative with two end naphthyl groups. By optimizing the fabrication process, the device exhibited a high field-effect hole mobility up to 0.12 cm2V−1s−1 and a high on/off current ratio of 3.3×105. On the other hand, OFETs showed typical n-type characteristics for diethynyl aryl derivative with two end heptafluoronaphthyl groups. We have observed clear changes from p-channel to n-channel conductions in OFETs by chemically modifying diethynyl aryl derivatives.

Keywords

organicdevicesthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1091: Symposium AA – Conjugated Organic Materials–Synthesis, Structure, Device and Applications , 2008 , 1091-AA11-12
Copyright
Copyright © Materials Research Society 2008

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