Hostname: page-component-8448b6f56d-t5pn6 Total loading time: 0 Render date: 2024-04-23T14:31:55.535Z Has data issue: false hasContentIssue false
  • English
  • Français

Spintronics with graphene

Published online by Cambridge University Press:  23 November 2012

P. Seneor ,
B. Dlubak ,
M.-B. Martin ,
A. Anane ,
H. Jaffres  and
A. Fert
P. Seneor
Affiliation:
Unité Mixte de Physique CNRS/Thales and Université Paris-Sud, France; pierre.seneor@thalesgroup.com
B. Dlubak
Affiliation:
Unité Mixte de Physique CNRS/Thales and Université Paris-Sud, France; bruno.dlubak@thalesgroup.com
M.-B. Martin
Affiliation:
Unité Mixte de Physique CNRS/Thales and Université Paris-Sud, France; marie-blandine.martin@thalesgroup.com
A. Anane
Affiliation:
Unité Mixte de Physique CNRS/Thales and Université Paris-Sud, France; abdelmadjid.anane@thalesgroup.com
H. Jaffres
Affiliation:
Unité Mixte de Physique CNRS/Thales and Université Paris-Sud, France; henri.jaffres@thalesgroup.com
A. Fert
Affiliation:
Unité Mixte de Physique CNRS/Thales and Université Paris-Sud, France; albert.fert@thalesgroup.com
Get access

Abstract

Because of its fascinating electronic properties, graphene is expected to produce breakthroughs in many areas of nanoelectronics. For spintronics, its key advantage is the expected long spin lifetime, combined with its large electron velocity. In this article, we review recent theoretical and experimental results showing that graphene could be the long-awaited platform for spintronics. A critical parameter for both characterization and devices is the resistance of the contact between the electrodes and the graphene, which must be large enough to prevent quenching of the induced spin polarization but small enough to allow for the detection of this polarization. Spin diffusion lengths in the 100-μm range, much longer than those in conventional metals and semiconductors, have been observed. This could be a unique advantage for several concepts of spintronic devices, particularly for the implementation of complex architectures or logic circuits in which information is coded by pure spin currents.

Keywords

devices (182)electronic material (187)spintronic (214)nanostructure (238)electrical properties (284)magnetoresistance (transport) (292)
Type
Research Article
Information
MRS Bulletin , Volume 37 , Issue 12: Graphene Fundamentals and Functionalities , December 2012 , pp. 1245 - 1254
Copyright
Copyright © Materials Research Society 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

Datta, S., Das, B., Appl. Phys. Lett. 56 (7), 665 (1990).CrossRefGoogle Scholar
Schmidt, G., Ferrand, D., Molenkamp, L., Filip, A., van Wees, B., Phys. Rev. B 62 (8), R4790 (2000).CrossRefGoogle Scholar
Dash, S.P., Sharma, S., Patel, R.S., de Jong, M.P., Jansen, R., Nature 462, 491 (2009).CrossRefGoogle Scholar
Castro Neto, A.H., Guinea, F., Peres, N.M.R., Novoselov, K.S., Geim, A.K., Rev. Mod. Phys. 82 (3), 2673 (2010).Google Scholar
Novoselov, K.S., Geim, A.K., Morosov, S.V., Jiang, D., Zhang, Y., Dubonos, S.V., Grigorievam, I.V., Firsov, A.A., Science 306 (5696), 666 (2004).CrossRefGoogle Scholar
Berger, C., Song, Z., Li, X., Wu, X., Brown, N., Naud, C., Mayou, D., Li, T., Hass, J., Marchenkov, A.N., Conrad, E.H., First, P.N., de Heer, W.A., Science 312 (5777), 1191 (2006).CrossRefGoogle Scholar
de Heer, W.A., Berger, C., Wu, X., Sprinkle, M., Hu, Y., Ruan, M., Stroscio, J.A., First, P.N., Haddon, R., Piot, B., Faugeras, C., Potemski, M., Moon, J.S., J. Phys. D: Appl. Phys. 43 (37), 374007 (2010).CrossRefGoogle Scholar
Jozsa, C., van Wees, B.J., in Handbook of Spin Transport and Magnetism, Tsymbal, E.Y., Zutic, I., Eds. (CRC Press, Boca Raton, FL, 2011), pp. 579–598.Google Scholar
Dery, H., Wu, H., Ciftcioglu, B., Huang, M., Song, Y., Kawakami, R., Shi, J., Krivorotov, I., Zutic, I., Sham, L.J., IEEE Trans. Electron Devices 59, 259 (2011).CrossRefGoogle Scholar
2011 International Technology Roadmap for Semiconductors (International SEMATECH: Austin, TX, 2011); www.itrs.net/Links/2011ITRS/Home2011.htm (accessed January 2012).Google Scholar
Behin-Aein, B., Datta, D., Salahuddin, S., Datta, S., Nat. Nanotechnol. 5, 266 (2010).CrossRefGoogle Scholar
Hill, E.W., Geim, A.K., Novoselov, K., Schedin, F., Blake, P., IEEE Trans. Magn. 42 (10), 2694 (2006).CrossRefGoogle Scholar
Tombros, N., Jozsa, C., Popinciuc, M., Jonkman, H.T., van Wees, B.J., Nature 448 (7153), 571 (2007).CrossRefGoogle Scholar
Cho, S., Chen, Y.F., Fuhrer, M., Appl. Phys. Lett. 91 (12), 123105 (2007).CrossRefGoogle Scholar
Ohishi, M., Shiraishi, M., Nouchi, R., Nozaki, T., Shinjo, T., Suzuki, Y., Jpn. J. Appl. Phys. 46 (25), L605 (2007).CrossRefGoogle Scholar
Goto, H., Kanda, A., Sato, T., Tanaka, S., Ootuka, Y., Odaka, S., Miyazaki, H., Tsukagoshi, K., Aoyagi, Y., Appl. Phys. Lett. 92 (21), 212110 (2008).CrossRefGoogle Scholar
Popinciuc, M., Jozsa, C., Zomer, P.J., Tombros, N., Veligura, A., Jonkman, H.T., van Wees, B.J., Phys. Rev. 80 (21), 214427 (2009).CrossRefGoogle Scholar
Jedema, F.J., Heersche, H.B., Filip, A.T., Baselmans, J.J.A., van Wees, B.J., Nature 416, 713 (2002).CrossRefGoogle Scholar
Han, W., McCreary, K.M., Pi, K., Wang, W.H., Li, Y., Wen, H., Chen, J.R., Kawakami, R.K., J. Magn. Magn. Mater. 324 (4), 365 (2012).Google Scholar
Yang, T.Y., Balakrishnan, J., Volmer, F., Avsar, A., Jaiswal, M., Samm, J., Ali, S.R., Pachoud, A., Zeng, M., Popenciuc, M., Guntherodt, G., Beschoten, B., Ozyilmaz, B., Phys. Rev. Lett. 107 (4), 047206 (2011).CrossRefGoogle Scholar
Han, W., Pi, K., McCreary, K.M., Li, Y., Wong, J.I., Swartz, A., Kawakami, R.K., Phys. Rev. Lett. 105 (16), 167202 (2010).CrossRefGoogle Scholar
Han, W., Kawakami, R.K., Phys. Rev. Lett. 107 (4), 047207 (2011).CrossRefGoogle Scholar
Han, W., Chen, J.R., Wang, D., McCreary, K.M., Wen, H., Swartz, A.G., Shi, J., Kawakami, R.K., Nanotechnology 23, 135203 (2012).CrossRefGoogle Scholar
Avsar, A., Yang, T.Y., Bae, S., Balakrishnan, J., Volmer, F., Jaiswal, M., Yi, Z., Ali, S.R., Guntherodt, G., Hong, B.H., Beschoten, B., Ozyilmaz, B., Nano Lett. 11 (6), 2363 (2011).CrossRefGoogle Scholar
Sprinkle, M., Siegel, D., Hu, Y., Hicks, J., Tejeda, A., Taleb-Ibrahimi, A., Le Fèvre, P., Bertran, F., Vizzini, S., Enriquez, H., Chiang, S., Soukiassian, P., Berger, C., de Heer, W.A., Lanzara, A., Conrad, E., Phys. Rev. Lett. 103 (22), 226803 (2009).CrossRefGoogle Scholar
Maassen, T., van den Berg, J.J., Ijbema, N., Fromm, F., Seyller, T., Yakimova, R., van Wees, B.J., Nano Lett. 12 (3), 1498 (2012).CrossRefGoogle Scholar
Dlubak, B., Martin, M.B., Deranlot, C., Servet, B., Xavier, S., Mattana, R., Sprinkle, M., Berger, C., de Heer, W.A., Petroff, F., Anane, A., Seneor, P., Fert, A., Nat. Phys. 8 (7), 557 (2012).CrossRefGoogle Scholar
Dlubak, B., Seneor, P., Anane, A., Barraud, C., Deranlot, C., Deneuve, D., Servet, B., Mattana, R., Petroff, F., Fert, A., Appl. Phys. Lett. 97 (9), 092502 (2010).CrossRefGoogle Scholar
Jozsa, C., Maassen, T., Popinciuc, M., Zomer, P.J., Veligura, A., Jonkman, H.T., van Wees, B.J., Phys. Rev. B 80 (24), 241403(R) (2009).CrossRefGoogle Scholar
Elliott, R.J., Phys. Rev. 96 (12), 266 (1954).CrossRefGoogle Scholar
Maassen, T., Dejene, F.K., Guimaraes, M.H.D., Jozsa, C., van Wees, B.J., Phys. Rev. B 83 (11), 115410 (2011).CrossRefGoogle Scholar
Bolotin, K.I., Sikes, K.J., Jiang, Z., Klima, M., Fudenberg, G., Hone, J., Kim, P., Stormer, H.L., Solid State Commun. 146 (9–10), 351 (2008).CrossRefGoogle Scholar
Dyakonov, M.I., Perel, V.I., Sov. Phys. JETP Lett. 13 (11), 467 (1971).Google Scholar
Ochoa, H., Castro-Neto, A.H., Guinea, F., Phys. Rev. Lett. 108 (20), 206808 (2012).CrossRefGoogle Scholar
Zhang, P., Wu, M.W., New J. Phys. 14 (3), 033015 (2012).CrossRefGoogle Scholar
Fukuma, Y., Wang, L., Idzuchi, H., Takahashi, S., Maekawa, S., Otani, Y., Nat. Mater. 10 (7), 527 (2011).CrossRefGoogle Scholar
Jaffrès, H., George, J.M., Fert, A., Phys. Rev. B 82 (14), 140408(R) (2010).CrossRefGoogle Scholar
van Son, P.C., van Kempen, H., Wyder, P., Phys. Rev. Lett. 58 (21), 2271 (1987).CrossRefGoogle Scholar
Johnson, M., Silsbee, R.H., Phys. Rev. Lett. 55 (17), 1790 (1985).CrossRefGoogle Scholar
Valet, T., Fert, A., Phys. Rev. B 48 (10), 7099 (1993).CrossRefGoogle Scholar
Hueso, L.E., Pruneda, J.M., Ferrari, V., Burnell, G., Valdés-Herrera, J.P., Simons, B.D., Littlewood, P.B., Artacho, E., Fert, A., Mathur, N.D., Nature 445 (7126), 410 (2007).CrossRefGoogle Scholar
Takahashi, S., Maekawa, S., Physica C 437–438, 309 (2006).CrossRefGoogle Scholar
Laczkowski, P., Vila, L., Nguyen, V.-D., Marty, A., Attane, J.-P., Jaffres, H., George, J.-M., Fert, A., Phys. Rev. B 85, 220404(R) (2012).CrossRefGoogle Scholar
Lou, X., Nat. Phys. 3, 197 (2007).CrossRefGoogle Scholar
Kimura, T., Otani, Y., Phys. Rev. Lett. 99, 196604 (2007).CrossRefGoogle Scholar
Suzuki, T., Sasaki, T., Oikawa, T., Shiraishi, M., Suzuki, Y., Noguchi, K., Appl. Phys. Express 4, 023003 (2011).CrossRefGoogle Scholar
Ku, J.H., Chang, J., Kim, H., Eom, J., Appl. Phys. Lett. 88, 172510 (2006).CrossRefGoogle Scholar
Appelbaum, I., Huang, B., Monsma, D.J., Nature 447, 295 (2007).CrossRefGoogle Scholar
Jansen, R., Nat. Mater. 11, 400 (2012).CrossRefGoogle Scholar
Jayasekera, T., Kong, B.D., Kim, K.W., Nardelli, M.B., Phys. Rev. Lett. 104, 146801 (2010).CrossRefGoogle Scholar
Krompiewski, S., Nanotechnology 23 (13), 135203 (2012).CrossRefGoogle Scholar
Castro Neto, A.H., Guinea, F., Phys. Rev. Lett. 103 (2), 026804 (2009).CrossRefGoogle Scholar
Varykhalov, A., Sanchez-Barriga, , Shikin, A.M., Vescovo, E., Rybkin, A., Marchenko, D., Rader, O., Phys. Rev. Lett. 101, 157601 (2008).CrossRefGoogle Scholar
Wunsch, B., Stauber, T., Sols, F., Guinea, F., Phys. Rev. Lett. 101, 036803 (2008).CrossRefGoogle Scholar
Munoz-Rojas, F., Fernandez-Rossier, J., Palacios, J.J., Phys. Rev. Lett. 102, 136810 (2009).CrossRefGoogle Scholar
Yang, H.X., Chshiev, M., Boulhavalov, D.W., Waintal, X., Roche, S., Phys. Rev. B 84, 214404 (2011).CrossRefGoogle Scholar
Yazyev, O.V., Rep. Prog. Phys. 73, 056501 (2010).CrossRefGoogle Scholar
Abanin, D.A., Morozov, S.V., Ponomarenko, L.A., Gorbachev, R.V., Mayorov, A.S., Katsnelson, M.I., Watanabe, K., Taniguchi, T., Novoselov, K.S., Levitov, L.S., Geim, A.K., Science 332 (6027), 328 (2011).CrossRefGoogle Scholar
Vera-Marun, I.J., Ranjan, V., van Wees, B.J., Phys. Rev. B 84 (24), 241408(R) (2011).CrossRefGoogle Scholar
San-Jose, P., Prada, E., McCann, E., Schomerus, H., Phys. Rev. Lett. 102, 247204 (2009).CrossRefGoogle Scholar