Hostname: page-component-7c8c6479df-ph5wq Total loading time: 0 Render date: 2024-03-29T16:00:54.164Z Has data issue: false hasContentIssue false

Structural Characterization of GaN Nanowires Fabricated via Direct Reaction of Ga Vapor and Ammonia

Published online by Cambridge University Press:  21 March 2011

R.N. Jacobs
Affiliation:
Dept. of Materials & Nuclear Engineering, University of Maryland, College Park, MD 20742
L. Salamanca-Riba
Affiliation:
Dept. of Materials & Nuclear Engineering, University of Maryland, College Park, MD 20742
M. He
Affiliation:
Materials Science Research Center of Excellence Howard University, Washington, DC 20059
G.L. Harris
Affiliation:
Materials Science Research Center of Excellence Howard University, Washington, DC 20059
P. Zhou
Affiliation:
Materials Science Research Center of Excellence Howard University, Washington, DC 20059
S. N. Mohammad
Affiliation:
Materials Science Research Center of Excellence Howard University, Washington, DC 20059
J.B. Halpern
Affiliation:
Materials Science Research Center of Excellence Howard University, Washington, DC 20059
Get access

Abstract

We report structural studies of large-scale wurtzite GaN nanowires fabricated by direct reaction of Ga vapor and NH3. This recently reported growth technique [1] demonstrates processing of GaN one-dimensional structures as thin as 26 nm and up to 500 μm in length. This method is both interesting and attractive in that fabrication is carried out without the assistance of template materials as required by other methods. In this study, transmission electron microscopy (TEM) is used to characterize the nanowires, while x-ray diffraction (XRD) and energy dispersive x-ray spectroscopy (EDS) data provide supporting structural/compositional analysis. Our structural investigation reveals the presence of thin hexagonal platelets, which we believe play a critical role in the nucleation, growth, and orientation of the wires. In particular, our findings indicate that most of the wires grow along the [2110] direction, normal to the platelet edges.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. He, M., Minus, I., Zhou, P., Mohammed, S.N., Halpern, J. B., Jacobs, R., Sarney, W.L., Salamanca-Riba, L., Vispute, R.D., Appl. Phys. Lett. 77, 37313733 (2000).Google Scholar
2. Han, W.. Fan, S., Li, Q., and Hu, Y., Science 277 12871289 (1997).Google Scholar
3. Lieber, C.M., Morales, A.M., Sheelan, P.E., Wong, E.W., Yang, P.., Proceedings of the Robert A. Welch 40th Conference on Chemical Research: Chemistry on the Nanometer Scale; 165187, (1997).Google Scholar
4. Brus, L.E., J. Phys. Chem., 98 3575, (1994).Google Scholar
5. Cheng, G.S., Zhang, L.D., Zhu, Y., Fei, G.T., and Li, L., Appl. Phys. Lett. 75, 24552457 (1999).Google Scholar
6. Duan, X.F. and Lieber, C.M., J. Am. Chem. Soc. 122, 188189 (2000).Google Scholar
7. Li, J.Y., Chen, X.L., Qiao, Z.Y., Cao, Y.G., and Lan, Y.C., J. Cryst. Growth 213, 408410 (2000).Google Scholar
8. Han, W., Redlich, P., Ernst, F., and Ruhle, M., Appl. Phys. Lett. 76, 652654 (2000).Google Scholar
9. Han, W., Bando, y., Kurashima, K., and Sato, T., Appl. Phys. Lett. 73, 3085 (1998).Google Scholar
10. Han, W., Redlich, Ph., Ernst, F., and Ruhle, M., Appl. Phys. Lett. 75, 1875 (1999).Google Scholar
11. Elwell, D., Feigelson, R.S., Simkins, M.M., and Tiller, W.A., J. Cryst. Growth 66, 45 (1984).Google Scholar
12. He, M., Zhou, P., Mohammad, S.N., Harris, G.L., Halpern, J.B., Jacobs, R.N., Sarney, W.L., Salamanca-Riba, L., J. Cryst. Growth (in press).Google Scholar