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P-type Nitrogen Doped ZnO Films Grown By Thermal Evaporation

Published online by Cambridge University Press:  31 January 2011

Wei Mu ,
Lei Guo ,
Lei Kerr  and
David C. Look
Wei Mu
Affiliation:
muw@muohio.edu, Miami University, Dept. of Paper and Chemical Engineering, Oxford, Ohio, United States
Lei Guo
Affiliation:
guol2@muohio.edu, Miami University, Dept. of Paper and Chemical Engineering, Oxford, Ohio, United States
Lei Kerr
Affiliation:
kerrll@muohio.edu, Miami University, Dept. of Paper and Chemical Engineering, Oxford, United States
David C. Look
Affiliation:
David.Look@WPAFB.AF.mil, Wright State University, Semiconductor Research Center, Dayton, Ohio, United States
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Abstract

We report the formation of p-type nitrogen doped ZnO (ZnO:N) grown by thermal-evaporation deposition. The effects of nitrogen precursors on the electrical and optical properties of ZnO:N were investigated. This study shows that growth process plays a critical role in the electrical properties of ZnO:N. The chemical reaction mechanism was analyzed.

Keywords

electronic materialoxidedopant
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1201: Symposium H – Zinc Oxide and Related Materials-2009 , 2009 , 1201-H02-08
Copyright
Copyright © Materials Research Society 2010

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