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Deep Levels in Multilayer Structures of Si/Si0.8Ge0.2 Grown by Low-Pressure Chemical Vapor Deposition

Published online by Cambridge University Press:  01 February 2011

Yutaka Tokuda  and
Kenichi Shirai
Yutaka Tokuda
Affiliation:
Department of Electronics, Aichi Institute of Technology, Toyota 470–0392, Japan
Kenichi Shirai
Affiliation:
Department of Electronics, Aichi Institute of Technology, Toyota 470–0392, Japan
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Abstract

Deep levels in multilayer structures of ten periods Si/Si0.8Ge0.2 (16/5 nm) grown by low-pressure chemical vapor deposition have been characterized by deep level transient spectroscopy (DLTS). DLTS measurements reveal one dominant peak (E1) at around 130 K with a minor peak (E2) at around 240 K. The dominant trap E1 (Ec – 0.19 eV) is ascribed to the dislocation-related defect. The increase of the E1 concentration by a factor of 2 to 3 and the change of its energy level to Ec – 0.22 eV are observed with annealing up to 120°C. It is speculated that hydrogen incorporated during growth associates with E1 and the behavior of E1 upon annealing is caused by the release of hydrogen from E1.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 799: Symposium Z – Progress in Compound Semiconductor Materials III - Electronic and Optoelectronic Applications , 2003 , Z.34
Copyright
Copyright © Materials Research Society 2004

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