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Real Structure and Internal Friction of Boron Doped with Zirconium

Published online by Cambridge University Press:  25 February 2011

G. Sh. Darsavelidze ,
G. V. Tsagareishvili ,
M. E. Antadze ,
O. A. Tsagareishvili ,
A. G. Khvedelidze  and
F. N. Tavadze
G. Sh. Darsavelidze
Affiliation:
Institute of Metallurgy, Academy of Sciences of the Georgian SSR, Tbilisi 380042, Georgia, USSR
G. V. Tsagareishvili
Affiliation:
Institute of Metallurgy, Academy of Sciences of the Georgian SSR, Tbilisi 380042, Georgia, USSR
M. E. Antadze
Affiliation:
Institute of Metallurgy, Academy of Sciences of the Georgian SSR, Tbilisi 380042, Georgia, USSR
O. A. Tsagareishvili
Affiliation:
Institute of Metallurgy, Academy of Sciences of the Georgian SSR, Tbilisi 380042, Georgia, USSR
A. G. Khvedelidze
Affiliation:
Institute of Metallurgy, Academy of Sciences of the Georgian SSR, Tbilisi 380042, Georgia, USSR
F. N. Tavadze
Affiliation:
Institute of Metallurgy, Academy of Sciences of the Georgian SSR, Tbilisi 380042, Georgia, USSR
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Abstract

The nature of interaction of point and linear defects in semiconductor boron doped with zirconium (∼ 1.5% at.) has been studied using electron microscope and internal friction methods. It was shown that doping with zirconium promoted the multiplication of polysynthetic twins and stacking faults. A computer simulated analysis of diffraction patterns was performed in terms of trigonal presentation. At the frequency of free torsional vibrations of ∼ 1Hz a high level of internal friction with maxima at 250, 300–320 and 380–420°C was revealed. It is supposed that the maxima are respectively due to: the twin-boundary motion accompanied by breaking of intericosahedral bonds (a); the process of ordering-disordering of atoms in the impurity atmospheres under the continuous change of the temperature and elastic fields of moving twinning dislocations in the {100} system (b); the impurity controlled twin-boundary motion in the {511} system.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 139
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

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