Hostname: page-component-8448b6f56d-jr42d Total loading time: 0 Render date: 2024-04-19T21:42:44.508Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of AlN Overgrowth on GaN Nanostructures Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

N. Gogneau ,
E. Monroy ,
D. Jalabert ,
E. Sarigiannidou ,
J. L. Rouvière  and
B. Daudin
N. Gogneau
Affiliation:
Equipe CEA-CNRS-UJF Nanophysique et Semiconducteurs, Département de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble Cedex 9, France
E. Monroy
Affiliation:
Equipe CEA-CNRS-UJF Nanophysique et Semiconducteurs, Département de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble Cedex 9, France
D. Jalabert
Affiliation:
Equipe CEA-CNRS-UJF Nanophysique et Semiconducteurs, Département de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble Cedex 9, France
E. Sarigiannidou
Affiliation:
Equipe CEA-CNRS-UJF Nanophysique et Semiconducteurs, Département de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble Cedex 9, France
J. L. Rouvière
Affiliation:
Equipe CEA-CNRS-UJF Nanophysique et Semiconducteurs, Département de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble Cedex 9, France
B. Daudin
Affiliation:
Equipe CEA-CNRS-UJF Nanophysique et Semiconducteurs, Département de Recherche Fondamentale sur la Matière Condensée, SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054-Grenoble Cedex 9, France
Get access

Abstract

The effects of AlN overgrowth on the structural properties of GaN nanostructures grown at 750°C by plasma-assisted molecular beam epitaxy have been investigated using Rutherford backscattering spectroscopy and transmission electron microscopy. The capping process induces a remarkable change in the dimension of the nanostructures. We demonstrate that the thickness/size reduction occurs at the first stage of AlN overgrowth and affects only the top GaN/AlN interface. This phenomenon is attributed to an exchange mechanism between Al atoms from the cap layer and Ga atoms in the nanostructures and depends on the strain state of the nanostructures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y4.4
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Mula, G., Adelmann, C., Moehl, S., Oullier, J., and Daudin, B., Phys. Rev. B 64, 195406 (2001).Google Scholar
2 Gogneau, N., Jalabert, D., Monroy, E., Shibata, T., Tanaka, M., and Daudin, B., J. Appl. Phys. 94, 2254 (2003).Google Scholar
3 Joyce, P. B., Krzyzewski, T. J., Bell, G. R., and Jones, T. S., Appl. Phys. Lett. 79, 3615 (2001).Google Scholar
4 Mkhoyan, K. A., Silcox, J., Wu, H., Schaff, W. J., and Eastman, L. F., Appl. Phys. Lett. 83, 2668 (2003).Google Scholar
5 Bourret, A., Adelmann, C., Daudin, B., Rouvière, J. L., Feuillet, G., and Mula, G., Phys. Rev. B 63, 245307 (2000).Google Scholar
6 Adelmann, C., Sarigiannidou, E., Jalabert, D., Hori, Y., Rouvière, J. L., and Daudin, B., Appl. Phys. Lett. 82, 4154 (2003).Google Scholar