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Electrical Properties of β-FeSi2 Thin Films on Insulating Substrates

Published online by Cambridge University Press:  01 February 2011

Kensuke Akiyama ,
Takeshi Kimura ,
Shin Nishiyama ,
Takeo Hattori ,
Naoki Ohashi  and
Hiroshi Funakubo
Kensuke Akiyama
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8502, Japan Kanagawa Industrial Technology Research Institute, 705–1 Shimoimaizumi, Ebina-shi, Kanagawa 234–0435, Japan
Takeshi Kimura
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8502, Japan
Shin Nishiyama
Affiliation:
Faculty of Engineering, Chiba University, 1–33 Yayoicho, Inage-ku, Chba-shi, Chiba 263–8522, Japan
Takeo Hattori
Affiliation:
Faculty of Engineering, Chiba University, 1–33 Yayoicho, Inage-ku, Chba-shi, Chiba 263–8522, Japan
Naoki Ohashi
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science, 1–1 Namiki, Tsukuba-shi, Ibaraki 305–0044, Japan
Hiroshi Funakubo
Affiliation:
Department of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226–8502, Japan
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Abstract

Iron silicide thin films were prepared on insulating substrates using RF magnetron sputtering method. Amorphous, polycrystalline and epitaxial β-FeSi2 were obtained on MgO(001), Al2O3(110) and Al2O3(001) substrates, respectively. Electrical conductivities of these films showed similar temperature dependence. Intrinsic band conduction and hopping conduction mechanism were predominant above and below 600K, respectively. The localized ordering in the polycrystalline and epitaxial films that controled the movement of carriers were as low as in the amorphous film. For the epitaxial β-FeSi2 film, electrical conductivity below 600K were affected by atomic ratio of silicon to iron (Si/Fe) in the films, because the localized ordering in the films decreased as Si/Fe atomic ratio decreased.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 796: Symposium V – Critical Interfacial Issues in Thin Film Optoelectronic and Energy Conversion Devices , 2003 , V2.10
Copyright
Copyright © Materials Research Society 2004

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References

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