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Short-channel and high-mobility p- and n-type organic single-crystal transistors with air-gap structures

Published online by Cambridge University Press:  23 February 2012

M. Uno ,
T. Uemura ,
K. Miwa ,
A. Facchetti  and
J. Takeya
M. Uno*
Affiliation:
TRI Osaka, Izumi, Osaka 594-1157, Japan ISIR, Osaka University, Ibaraki, Osaka 567-0047, Japan
T. Uemura
Affiliation:
ISIR, Osaka University, Ibaraki, Osaka 567-0047, Japan
K. Miwa
Affiliation:
ISIR, Osaka University, Ibaraki, Osaka 567-0047, Japan
A. Facchetti
Affiliation:
Polyera Corporation, Skokie, Illinois 60077, USA
J. Takeya
Affiliation:
ISIR, Osaka University, Ibaraki, Osaka 567-0047, Japan
*
*Email: uno@tri.pref.osaka.jp
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Abstract

In an effort to realize high-speed organic logic components, p- and n-type single-crystal organic field-effect transistors (SC-OFETs) were fabricated using air-gap structures with channel lengths as short as several μm. High carrier mobility of about 10 cm2/Vs is demonstrated in rubrene SC-OFETs even with the short channel length of 6 μm, using Si-based microstructures. The contact resistance is estimated to be 450 Ohm cm, which is only 5% of the total channel resistance between source and drain electrodes. Performances of n-type air-gap devices based on PDIF-CN2 are also demonstrated exhibiting electron transport with the carrier mobility of about 2 cm2/Vs. Furthermore, micron-scale air-gap structures are fabricated using insulating materials on glass substrates to reduce parasitic gate capacitance. The cut-off frequency of this rubrene air-gap device is measured to be as high as 8 MHz with applied drain voltage VD of 15 V. These techniques are promising to be applicable to next-generation organic high-speed logic circuits.

Keywords

semiconductingorganiccrystalline
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1402: Symposium U – Charge Generation/Transport in Organic Semiconductor Materials , 2012 , mrsf11-1402-u05-02
Copyright
Copyright © Materials Research Society 2012

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References

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